Zobrazeno 1 - 10
of 76
pro vyhledávání: '"J.-L. Everaert"'
Autor:
C. Porret, J.-L. Everaert, M. Schaekers, L.-A. Ragnarsson, A. Hikavyy, E. Rosseel, G. Rengo, R. Loo, R. Khazaka, M. Givens, X. Piao, S. Mertens, N. Heylen, H. Mertens, C. Toledo De Carvalho Cavalcante, G. Sterckx, S. Brus, A. Nalin Mehta, M. Korytov, D. Batuk, P. Favia, R. Langer, G. Pourtois, J. Swerts, E. Dentoni Litta, N. Horiguchi
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Akademický článek
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Autor:
C. Porret, Y.H. Huang, G. Rengo, H. Yu, M. Schaekers, J.-L. Everaert, M. Heyns, A. Vohra, A. Hikavyy, E. Rosseel, R. Langer, R. Loo
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Autor:
Kelly E Hollar, H. van Meer, Lee Jae Young, J. del Agua Borniquel, Marc Schaekers, Bastien Douhard, Lin-Lin Wang, Alexis Franquet, Naoto Horiguchi, L. Date, Hao Yu, Wolfgang R. Aderhold, Fareen Adeni Khaja, Nadine Collaert, Dan Mocuta, Abhilash J. Mayur, K. De Meyer, J.-L. Everaert, Yu-Long Jiang
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Ga diffusion and activation in Si, SWGe 0.6 and Ge are studied comprehensively. Optimal Ga activation conditions for Si 0.4 Ge 0.6 and Ge feature a low thermal budget: Ga is highly activated at 400°C in Ge and at 500°C in SWGe 0.6 using a 1min rapi
Autor:
Fareen Adeni Khaja, Marc Schaekers, H. van Meer, Hao Yu, Naoto Horiguchi, Lee Jae Young, Y.-L. Jiang, L.-L. Wang, Dan Mocuta, Kelly E Hollar, L. Date, J.-L. Everaert, Wolfgang R. Aderhold, J. del Agua Borniquel, Abhilash J. Mayur, K. De Meyer, Andriy Hikavyy
Publikováno v:
2017 Symposium on VLSI Technology.
We report record breaking values for PMOS source drain (S/D) contact resistivity, ρ c 0.4 Ge 0.6 in combination with subsequent pulsed nanosecond laser anneal (NLA). Cross section transmission electron microscopy (XTEM) shows the pc reduction mechan
Autor:
Tarun Agarwal, Liesbeth Witters, S. A. Chew, Jerome Mitard, Kathy Barla, Pierre Eyben, Hao Yu, Niamh Waldron, Aaron Thean, Thomas Chiarella, K. De Meyer, Nadine Collaert, Steven Demuynck, Geoffrey Pourtois, Erik Rosseel, Andriy Hikavyy, Marc Schaekers, Clement Merckling, Naoto Horiguchi, Dan Mocuta, J.-L. Everaert, Stefan Kubicek, Anda Mocuta, A. Sibaja-Hernandez
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
This work investigates the interface resistivity of several heterostructures. Theoretical simulations suggest that, apart from the doping impact, the band offset and the difference in density of states (DOS) increase significantly the heterostructure
Autor:
S. A. Chew, K. De Meyer, Steven Demuynck, Erik Rosseel, Aaron Thean, Kathy Barla, Stefan Kubicek, Antony Premkumar Peter, Anda Mocuta, Marc Schaekers, Naoto Horiguchi, J.-L. Everaert, Nadine Collaert, Hao Yu
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
This paper introduces the investigations on ultralow metal/semiconductor contact resistivity (ρc). First, we build a multiring circular transmission line model (MR-CTLM), a novel ρc test structure with simple process and high accuracy for rigorous
Autor:
Erik Rosseel, Stefan Kubicek, Kathy Barla, Marc Schaekers, Antony Premkumar Peter, Thomas Chiarella, Naoto Horiguchi, W.-B. Song, Aaron Thean, J-A. Ragnarsson, Steven Demuynck, Ju-Bum Lee, K. De Meyer, Hao Yu, D.I. Kim, J.-L. Everaert, Nadine Collaert
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
© 2015 IEEE. Record-low contact resistivity (pc) for n-Si, down to 1.5×10-9 Q-cm2, is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti s
Autor:
A. Meszaros, P. Tutto, Marshall Wilson, A. Pap, J.-L. Everaert, Krisztián Kis-Szabó, T. Pavelka, Piotr Edelman, Jacek Lagowski, Erik Rosseel, Andrew Findlay
Publikováno v:
ECS Transactions. 28:33-41
A recently proposed noncontact method for mobility measurement in an inversion layer created by corona charging is modified taking advantage of two unique features of corona-voltage metrology; 1. the exact knowledge of the corona charge placed on die
Autor:
Barry O'Sullivan, V. Kaushik, M.M. Heyns, Lars-Ake Ragnarsson, Luigi Pantisano, J.-L. Everaert, S. DeGendt, E. Rohr, Lionel Trojman
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54 (7), pp.1771-1775. ⟨10.1109/TED.2007.898460⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2007, 54 (7), pp.1771-1775. ⟨10.1109/TED.2007.898460⟩
The results of a systematic study on the effects of nitrogen incorporation into (60%Hf/40%Si) hafnium silicate/SiO2 dielectric stacks are presented. Several nitridation methods and processes are compared as a function of the highest performing SiO2 i