Zobrazeno 1 - 10
of 25
pro vyhledávání: '"J.-H. Fock"'
Autor:
H. Pohlmann, M. Dumling, W. Schnitt, Antoon M. H. Tombeur, Henricus G. R. Maas, J.-H. Fock, J.R. Haartsen, Ronald Dekker, Theodorus Martinus Michielsen
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
A simple and robust technology for the transfer of circuits, processed on normal silicon wafers, to alternative substrates is presented. Substrate transfer technology (STT) is a post-processing technology based on adhesive bonding using a UV curing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ec89b883fb268699472790836c4b98d
https://doi.org/10.1109/bipol.2006.311141
https://doi.org/10.1109/bipol.2006.311141
Autor:
Theodorus Martinus Michielsen, J.-H. Fock, M. Dumling, W. Schnitt, C. Jonville, Antoon M. H. Tombeur, H. Pohlmann, Ronald Dekker, O. Gourhant
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..
In CIRCONFLEX technology, circuits fabricated on SOI wafers are transferred to a 10 /spl mu/m thick polyimide carrier. The highly flexible circuits remain defect free even after bending to radii of less than 1 mm, making them attractive for chip-in-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c61f1731e404840bb25606d0384527
https://doi.org/10.1109/bipol.2005.1555192
https://doi.org/10.1109/bipol.2005.1555192
Autor:
Ronald Dekker, J.-H. Fock, P. Mijlemans, H. Pohlmann, K. Dessein, C. Jonville, A.M.H. Tombeur, A. Gakis, Cornelis Eustatius Timmering, W. Schnitt, Theodorus Martinus Michielsen, O.M. Kuijken
Publikováno v:
IEEE International Electron Devices Meeting 2003.
Substrate transfer is proposed as a wafer-scale postprocessing technology to transfer circuits processed with standard IC processing to an alternative substrate e.g. glass. The advantages of the complete elimination of RF coupling to the resistive si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bbc98981dfba9c09cc40e010d41a9e4
https://doi.org/10.1109/iedm.2003.1269301
https://doi.org/10.1109/iedm.2003.1269301
Autor:
J. -H. Fock, H. Fehling
Publikováno v:
Prozeßtechnologie ISBN: 9783540176701
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a6ca9bbfa13ffb4d42e7e48d7f3409
https://doi.org/10.1007/978-3-662-09540-9_4
https://doi.org/10.1007/978-3-662-09540-9_4
Autor:
J.-H. Fock, E.E. Koch
Publikováno v:
Chemical Physics. 96:125-143
Photoelectron energy distribution curves from solid films of SF 6 and CCl 4 have been measured in the photon energy range 10 ⩽ hr ⩽ 40 eV using synchrotron radiation. The binding energies, peak widths and relative partial cross sections have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b58b172e65c6d95ce5046fdd53d3761b
https://doi.org/10.1016/0301-0104(85)80199-3
https://doi.org/10.1016/0301-0104(85)80199-3
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 34:225-234
The electronic structure of the valence bands of polycrystalline films of pyridine (C 5 H 5 N), including all valence levels extending from initial energies of 4 down to 30 eV ( E VAC = 0), has been determined from photoelectron energy distribution m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0271c024fae3c45dee93ef772e033801
https://doi.org/10.1016/0368-2048(84)80067-5
https://doi.org/10.1016/0368-2048(84)80067-5
Publikováno v:
Solid State Communications. 42:897-901
Surface induced local d-band states in the upper 4d band between ∼ 4 and ∼ 5.2 eV below EFermi have been identified for polycrystalline silver films in photoemission experiments using synchroton radiation. A thin over-coat (10 a) by an Al film le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adbe44b91345bd1709d8ca6b7af9f1e9
https://doi.org/10.1016/0038-1098(82)90235-6
https://doi.org/10.1016/0038-1098(82)90235-6
Publikováno v:
Chemical Physics Letters. 89:281-286
Photoelectron energy distribution curves from solid nitrogen were measured for excitation energies to 40 cV using synchrotron radiation. Partial cross sections for emission from 3σ g , 1π u and 2σ u derived valence bands show pronounced mauna 3, 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722832b45120240784866a37e214af01
https://doi.org/10.1016/0009-2614(82)83499-4
https://doi.org/10.1016/0009-2614(82)83499-4
Autor:
E.E. Koch, J.-H. Fock
Publikováno v:
Chemical Physics Letters. 105:38-43
Photoelectron energy distribution curves from solid acetylene were measured for excitation energies up to 30 eV using synchrotron radiation. The partial cross sections are discussed in relation to theory and other experiments. The 1π u valence-band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b72c65fdfd59b82c0a007f78d232366e
https://doi.org/10.1016/0009-2614(84)80410-8
https://doi.org/10.1016/0009-2614(84)80410-8
Publikováno v:
Chemical Physics. 83:377-389
Photoelectron energy distribution curves from solid CO 2 have been determined for excitation energies from hv = 14 up to 40 eV using synchrotron radiation. A 1:1 correspondence to the gas-phase photoelectron spectrum is observed for the occupied mole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21fb7137ea8c9fb7d66ca5a7be842e22
https://doi.org/10.1016/0301-0104(84)85013-2
https://doi.org/10.1016/0301-0104(84)85013-2