Výsledky vyhledávání - "J.-F. Larchanche"

High frequency characterization of compact N+Poly/Nwell varactor using waffle-layout

Autor: Christophe Gaquiere, Y. Morandini, J.-F. Larchanche

Publikováno v: Proceedings of the 8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2008
8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2008
8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2008, 2008, United States. pp.167-170, ⟨10.1109/SMIC.2008.48⟩

The high frequency characterization of a new waffle layout for N+Poly/Nwell varactor has been studied in STMicroelectronics 65 nm CMOS process. We compare this new waffle layout with model of standard multifingers varactor. In addition to the area sa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8bc8323f18b20070bf227e4478bcacb
https://hal.science/hal-00361118

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Characterization of MOS varactor with large signal Network Analyser (LSNA) in CMOS 65nm bulk and SOI technologies

Autor: Christophe Gaquiere, Damien Ducateau, J.-F. Larchanche, Yvan Morandini, Daniel Gloria

Publikováno v: Proceedings of the 69th ARFTG Microwave Measurement Conference
Proceedings of the 69th ARFTG Microwave Measurement Conference, 2007, Honolulu, HI, United States

Here we report for the first time the non linear characterization and modeling of MOS varactor with a LSNA in bulk and SOI process. The comparison between large signal measurements and Harmonic Balance simulation using an electrical equivalent scheme

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84bca994b0c3aa1fa6532212c5996975
https://doi.org/10.1109/arftg.2007.5456328

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Evaluation of SiGeC HBT varactor using different collector access and base-collector junction configuration in BiCMOS technologies

Autor: J.-F. Larchanche, Christophe Gaquiere, Y. Morandini

Publikováno v: Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM'07
IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM'07
IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM'07, 2007, United States. pp.246-249, ⟨10.1109/BIPOL.2007.4351880⟩

This paper is focused on the evaluation of SiGeC HBT varactor in BiCMOS technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26e83640e53e42a6d3c513ad8be73117
https://hal.archives-ouvertes.fr/hal-00284401

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Record RF performance of standard 90 nm CMOS technology

Autor: R. de Kort, C. Petot, C. Clement, D.B.M. Klaassen, L.F. Tiemeijer, Y. Bouttement, A.J. Scholten, Daniel Gloria, J.-F. Larchanche, A. Duvallet, B. Van Haaren, Serge Bardy, R. van Langevelde, Guido T. Sasse, R.J. Havens, I.-S. Lim, S. Boret, Patrick Scheer, A. Zlotnicka

Publikováno v: IEEE International Electron Devices Meeting 2004, 441-444
STARTPAGE=441;ENDPAGE=444;TITLE=IEEE International Electron Devices Meeting 2004
Scopus-Elsevier

We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34c095a4191ceb72675485251a91ee7c
https://research.utwente.nl/en/publications/ff81a462-30c3-44f7-ba59-77af6b5aee67

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