Zobrazeno 1 - 10
of 130
pro vyhledávání: '"J.-F. Damlencourt"'
Autor:
V. Benevent, Jean-Paul Barnes, D. Lafond, Didier Dutartre, Francois Andrieu, J.M. Hartmann, M. Veillerot, S. Morvan, J.-F. Damlencourt, Bernard Previtali, Nicolas Loubet
Publikováno v:
Solid-State Electronics. 83:10-17
We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow “mushroom-free” Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded238f4142b08ed05fda2063f567980
https://doi.org/10.1016/j.sse.2013.01.033
https://doi.org/10.1016/j.sse.2013.01.033
Publikováno v:
Thin Solid Films. 520:3185-3189
In a 300 mm industrial Reduced Pressure–Chemical Vapour Deposition tool we have assessed the advantages and drawbacks of disilane for the low temperature growth of Si and SiGe. Four distinct regions can be noticed on the Arrhenius plot of the Si gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76858b0117a7aa4c5a7acd13e7e3a1b5
https://doi.org/10.1016/j.tsf.2011.10.164
https://doi.org/10.1016/j.tsf.2011.10.164
Autor:
J. F. Damlencourt, C. Bonafos, A. Diab, Sorin Cristoloveanu, I. Ionica, Jung-Hee Lee, E. Saracco
Publikováno v:
Journal of The Electrochemical Society. 159:H467-H472
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12528f305c6cf7e04d23bb9923e0bc49
https://doi.org/10.1149/2.005205jes
https://doi.org/10.1149/2.005205jes
Autor:
Paulo Gentil, Laurent Clavelier, Q.T. Nguyen, Benjamin Vincent, Yves Morand, Sorin Cristoloveanu, J.-F. Damlencourt
Publikováno v:
Solid-State Electronics. 51:1172-1179
We present the fabrication and characterization of ultra thin and relatively thick SiGe-On-Insulator wafers with different Ge contents prepared by Ge condensation technique. The fabrication procedures as well as the structural analysis are detailed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c596c6795db946c63d13d62323fe3ec0
https://doi.org/10.1016/j.sse.2007.07.015
https://doi.org/10.1016/j.sse.2007.07.015
Publikováno v:
Journal of non-crystalline solids 353 (2007): 635–638.
info:cnr-pdr/source/autori:Barrett, N; Renault, O; Damlencourt, JF; Maccherozzi, F; Fabrizioli, M/titolo:Photoelectron spectroscopy study of the effect of substrate doping on an HfO2%2FSiO2%2Fn-Si gate stack/doi:/rivista:Journal of non-crystalline solids/anno:2007/pagina_da:635/pagina_a:638/intervallo_pagine:635–638/volume:353
info:cnr-pdr/source/autori:Barrett, N; Renault, O; Damlencourt, JF; Maccherozzi, F; Fabrizioli, M/titolo:Photoelectron spectroscopy study of the effect of substrate doping on an HfO2%2FSiO2%2Fn-Si gate stack/doi:/rivista:Journal of non-crystalline solids/anno:2007/pagina_da:635/pagina_a:638/intervallo_pagine:635–638/volume:353
Core level photoelectron spectroscopy has been used to investigate the effect of substrate doping on the binding energies of 1 nm HfO2/0.6 nm SiO2/Si films. A characteristic 0.26-0.30 nm Hf0.35Si0.65O2 silicate interface is formed between the gate ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89c7de387dd9285c24ec2467941b575a
https://doi.org/10.1016/j.jnoncrysol.2006.11.013
https://doi.org/10.1016/j.jnoncrysol.2006.11.013
Autor:
C. Licitra, J.-F. Damlencourt, Laurent Clavelier, Emmanuel Nolot, P. Rivallin, Benjamin Vincent, Yves Morand
Publikováno v:
Semiconductor Science and Technology. 22:237-244
Today, to our knowledge, only two techniques are used to perform GeOI substrates: the Smart-Cut™ technique and the Ge condensation technique. The latter is very sensitive to the initial parameters but is the only one which allows Si and Ge-on-insul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e5235d445dfe60428fe96f5efb0332
https://doi.org/10.1088/0268-1242/22/3/011
https://doi.org/10.1088/0268-1242/22/3/011
Autor:
B. Hazebrouck, P. Neofytou, P. Swiezewsk, R. Ciobanu, S. Fernández, S. Contreras, J. F. Damlencourt, M. Pilou, A. Tabrea, Iñigo Larraza, C. Vaquero, R. Pina, O. Salvi, Drew Thompson, David Y.H. Pui, J. M.López De Ipiña, M. Calderon, H. Stockmann-Juvala, A. Romero, V. Vaananen, D. Boutry, K. Otkallo, T. Oroz, E. Jankowska, C. Salazar, A. Pintea, B. Hargreaves
Publikováno v:
TECNALIA Publications
Fundación Tecnalia Research & Innovation
Fundación Tecnalia Research & Innovation
This paper presents a general overview of the work carried out by European project SCAFFOLD (GA 280535) during its 30 months of life, with special emphasis on risk management component. The research conducted by SCAFFOLD is focused on the European co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f76458062b09e0a70fe2c5860f7e5ee4
http://hdl.handle.net/11556/330
http://hdl.handle.net/11556/330
Autor:
J.-F. Damlencourt, Francois Andrieu, Bernard Guillaumot, O. Renault, Thomas Ernst, F. Ducroquet, Olivier Weber, Simon Deleonibus, J.M. Hartmann, A.M. Papon
Publikováno v:
IEEE Transactions on Electron Devices. 53:449-456
This paper describes an extensive experimental study of TiN/HfO/sub 2//SiGe and TiN/HfO/sub 2//Si cap/SiGe gate stacked-transistors. Through a careful analysis of the interface quality (interface states and roughness), we demonstrate that an ultrathi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::083369e88a6ea9c578537f03ae5cd5f2
https://doi.org/10.1109/ted.2005.863536
https://doi.org/10.1109/ted.2005.863536
Autor:
J.-F. Damlencourt, Elena O. Filatova, F. Martin, Philippe Jonnard, Jean-Michel André, Olivier Renault
Publikováno v:
Surface and Interface Analysis. 38:777-780
X-ray reflection spectroscopy (XRS) and X-ray emission spectroscopy (XES) were used to characterize a HfO2/SiO2/Si system. XRS performed at different glancing angles around the O K absorption edge and analysed with Kramers–Kronig transform (KKT) en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c91c69789d6a3726889b59a24f16619
https://doi.org/10.1002/sia.2133
https://doi.org/10.1002/sia.2133
Autor:
Gerard Ghibaudo, Julien Buckley, J. F. Damlencourt, Marc Gely, Simon Deleonibus, Giuseppe Nicotra, François Martin, B. De Salvo
Publikováno v:
Solid-State Electronics. 49:1833-1840
Engineering of the tunnel barrier of non-volatile memories is addressed in this paper. The strong potential of multilayer stacks for reducing the programming times of these devices, without altering their retention characteristics, is studied. To thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f8c61bdfcc74ef95b5e68822bb60218
https://doi.org/10.1016/j.sse.2005.10.005
https://doi.org/10.1016/j.sse.2005.10.005