Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

Autor: C. Daguet, P. Ossart, J. Etrillard, J. F. Bresse, Gilles Patriarche, M. Juhel

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:626-632

We report on the sidewall and surface characterization of InP etched patterns obtained by inductively coupled plasma (ICP). The fabrication of InP based optoelectronic integrated circuits requires dry etching processes, normally using CH4/H2 gas mixt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd5630783609c67901e8bd963737ebf1
https://doi.org/10.1116/1.580695

Application aspects of beam injection methods

Autor: J.-F. Bresse

Publikováno v: Materials Science and Engineering: B. 24:229-232

This paper gives guidelines to help those who want to characterize a semiconductor sample or device. A short overview of the existing beam injection techniques is presented. Orders of magnitude of spatial resolution and sensitivity are given for each

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aca57908c59f61375877670e18ce0c99
https://doi.org/10.1016/0921-5107(94)90334-4

GeMoW Refractory Ohmic Contact for GaAs / GaAlAs Self‐Aligned Heterojunction Bipolar Transistors

Autor: Y. Gao, C. Besombes, C. Dubon-Chevallier, C. Mayeux, P. Blanconnier, P. Henoc, J. F. Bresse

Publikováno v: Journal of The Electrochemical Society. 137:1514-1519

A study of the properties of As-doped and undoped GeMoW contacts prepared by different annealing techniques leads to the optimization of a new refractory ohmic contact consisting of an As-doped Ge-layer deposited by electron beam evaporation and sput

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4caf73d6cb7861aa10c86e7711ebdd63
https://doi.org/10.1149/1.2086703

Thermally stable low resistance ohmic contacts ton‐type gallium arsenide: Magnetron cathodic sputter‐deposited NiInW contacts

Autor: B. Agius, J. F. Bresse, Michel Froment, M. C. Hugon, C. Dubon‐Chevallier, F. Varniere

Publikováno v: Applied Physics Letters. 58:2773-2775

W/Ni0.9‐In0.1 refractory ohmic contacts presenting low specific resistivity have been formed on n‐type GaAs by magnetron cathodic sputtering and subsequently annealed by rapid thermal processing at 850 °C for 10 s. The increase of Ni‐In film t

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https://doi.org/10.1063/1.104782

USE OF SCANNING ELECTRON ACOUSTIC MICROSCOPY FOR III-V COMPOUNDS DEVICES ANALYSIS

Autor: J. F. Bresse

Publikováno v: Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1991, 01 (C6), pp.C6-285-C6-293. ⟨10.1051/jp4:1991643⟩

The use of scanning electron acoustic microscopy (SEAM) in III-V compounds devices is demonstrated. The order of magnitude of the attainable resolution is given, depending of the depth of the observed defect. A spatial resolution nearly equal to the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::910056e9fed29c56fdaf5b73dc469a4c
https://hal.archives-ouvertes.fr/jpa-00250729/file/ajp-jp4199101C643.pdf