Zobrazeno 1 - 10 of 238 pro vyhledávání: '"J.-F. Bresse"'
3
Low damage dry etching of III–V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma
Autor: J. Etrillard, J. F. Bresse, C. Daguet, M. Riet, J. Mba
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1174-1181
Etching of InGaAs and InP in inductively coupled plasma (ICP) using SiCl4 was studied for heterojunction bipolar transistor (HBT) applications. Low sample temperature was used to minimize etching isotropy and to reduce group V element desorption. The
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ecdafc3302c970a8469d05962d08807a
https://doi.org/10.1116/1.581791
Zobrazit plný text záznamu
4
Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
Autor: C. Daguet, P. Ossart, J. Etrillard, J. F. Bresse, Gilles Patriarche, M. Juhel
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:626-632
We report on the sidewall and surface characterization of InP etched patterns obtained by inductively coupled plasma (ICP). The fabrication of InP based optoelectronic integrated circuits requires dry etching processes, normally using CH4/H2 gas mixt
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd5630783609c67901e8bd963737ebf1
https://doi.org/10.1116/1.580695
Zobrazit plný text záznamu
5
A new analytical model for cathodoluminescence emission as a function of the beam energy in GaAs and InP materials
Autor: J.-F. Bresse
Publikováno v: Materials Science and Engineering: B. 42:199-203
Starting from an analytical expression of the energy loss as a function of the depth, a complete analytical calculation has been done for the cathodoluminescence (CL) intensity in GaAs and InP materials. For the case of a bulk substrate, the analytic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57bc6a4cc1a294cf889d861d08ee2989
https://doi.org/10.1016/s0921-5107(96)01707-2
Zobrazit plný text záznamu
6
Application aspects of beam injection methods
Autor: J.-F. Bresse
Publikováno v: Materials Science and Engineering: B. 24:229-232
This paper gives guidelines to help those who want to characterize a semiconductor sample or device. A short overview of the existing beam injection techniques is presented. Orders of magnitude of spatial resolution and sensitivity are given for each
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aca57908c59f61375877670e18ce0c99
https://doi.org/10.1016/0921-5107(94)90334-4
Zobrazit plný text záznamu
7
Use of the scanning electron acoustic microscopy (SEAM) for the study OF III-V compound semiconductors
Autor: J.-F. Bresse
Publikováno v: Scanning. 12:308-314
We present here examples of applications of SEAM for the characterization of III-V compound semiconductors and the visualisation of defects in devices. The electron acoustic signal can be quantitatively correlated to the total incorporation of impuri
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::98aaad87bd594de0388152d7c1db1053
https://doi.org/10.1002/sca.4950120605
Zobrazit plný text záznamu
8
GeMoW Refractory Ohmic Contact for GaAs / GaAlAs Self‐Aligned Heterojunction Bipolar Transistors
Autor: Y. Gao, C. Besombes, C. Dubon-Chevallier, C. Mayeux, P. Blanconnier, P. Henoc, J. F. Bresse
Publikováno v: Journal of The Electrochemical Society. 137:1514-1519
A study of the properties of As-doped and undoped GeMoW contacts prepared by different annealing techniques leads to the optimization of a new refractory ohmic contact consisting of an As-doped Ge-layer deposited by electron beam evaporation and sput
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4caf73d6cb7861aa10c86e7711ebdd63
https://doi.org/10.1149/1.2086703
Zobrazit plný text záznamu
10
Thermally stable low resistance ohmic contacts ton‐type gallium arsenide: Magnetron cathodic sputter‐deposited NiInW contacts
Autor: B. Agius, J. F. Bresse, Michel Froment, M. C. Hugon, C. Dubon‐Chevallier, F. Varniere
Publikováno v: Applied Physics Letters. 58:2773-2775
W/Ni0.9‐In0.1 refractory ohmic contacts presenting low specific resistivity have been formed on n‐type GaAs by magnetron cathodic sputtering and subsequently annealed by rapid thermal processing at 850 °C for 10 s. The increase of Ni‐In film t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85c475bb38b483d3466b87a75acfa935
https://doi.org/10.1063/1.104782
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje