Zobrazeno 1 - 10
of 34
pro vyhledávání: '"J.-C. Remy"'
Publikováno v:
Journal of The Electrochemical Society. 145:1672-1677
A kinetic study of the titanium nitride growth by low pressure chemical vapor deposition (LPCVD) from gas‐phase was carried out. Experiments were performed in the temperature range of 600–900°C and in the total pressure range of 20 to 73 Pa. Par
Publikováno v:
Microelectronic Engineering. :421-425
Titanium nitride layers are deposited by Rapid Thermal Low-Pressure Chemical Vapor Deposition (RTLPCVD) from the TiCl 4 NH 3 H 2 gaseous phase. Growth rate, resistivity and crystallographic orientation are studied as a function of the depositio
Publikováno v:
Journal of The Electrochemical Society. 143:3251-3256
A thermodynamic study of titanium nitride formation on a patterned oxidized silicon substrate in the TiCl{sub 4}-NH{sub 3}-N{sub 2} gaseous phase was carried out. Calculations were performed in the temperature range of 700--1,300 K and in the total p
Publikováno v:
New Phytologist. 130:141-147
summary This study examined the influence of mycorrhizal infection on ionic exchanges by roots, by measuring rhizosphere pH and the quantities of protons released by roots of mycorrhizal and non-mycorrhizal pine (Pinus pinaster × Suillus collinitus)
Publikováno v:
ChemInform. 23
The aim of this work is to selectively deposit titanium disilicide films on silicon area vs. silicon oxide area through a new commercial RTLPCVD apparatus. As a preliminary study, we tested our deposition system by using the well-known polysilicon de
Publikováno v:
Journal of The Electrochemical Society. 139:2260-2263
The aim of this work is to selectively deposit titanium disilicide films on silicon area vs. silicon oxide area through a new commercial RTLPCVD apparatus. As a preliminary study, we tested our deposition system by using the well-known polysilicon de
Publikováno v:
Applied Surface Science. 53:11-17
Among the various materials likely to be used as substitutes for polysilicon, TiSi 2 appears to offer a greater number of advantages compared to other silicides used in VLSI devices. It has, indeed, the lowest resistivity (15μω· cm) and can be sel
Autor:
Bruno Lavigne, Patrick Brindel, J.-C. Remy, L. Pierre, D. de la Grandiere, Beatrice Dagens, B. Thedrez, J.-C. Bouley, E. Balmefrezol, Olivier Leclerc, Jean-Luc Moncelet, Romain Brenot
Publikováno v:
OFC 2003 Optical Fiber Communications Conference, 2003..
An all-optical 3R regenerator based on cascaded XGM-SOA and SOA-MZI is implemented in an all-EDFA 42.66 Gbit/s SMF/DCF dispersion-managed RZ loop with -11 dBm input power, yielding a BER of 1.6.10/sup -4/ after 30,000 km in WDM environment with four
Publikováno v:
Journal of The Electrochemical Society. 134:2080-2083
Publikováno v:
Journal of The Electrochemical Society. 127:1532-1537
The thermodynamics of aluminum nitride formation in the and systems have been studied at 1200° and 1400°K. The nature of the condensed phase and the equilibrium gas phase composition have been determined. Aluminum nitride was the only condensed pha