Strategies for Reducing Particle Defects in Ti and TiN Thin-Film Deposition Processes

Autor: Aditya Kumar, Bhavyen Patel, Isabelle Ferain, Olugbenga O. Famodu, J.-B. Laloë, Nirjhar Bhattacharjee

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 32:48-53

Generation of particle defects in semiconductor manufacturing is inevitable, but it has to be minimized to enhance IC yield. There are various causes for the generation of particle defects in different semiconductor manufacturing processes, such as d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bcbc4c89f7953540452770b35ec9ccc2
https://doi.org/10.1109/tsm.2018.2876463

Extra-pattern killer defectivity improvement and enhancement of within-feature barrier coverage by optimization of TaN barrier PVD process in 90p Cu wire interconnects for 28nm technology

Autor: Anbu Selvam Km Mahalingam, Qian Ge, J.-B. Laloë, San Leong Liew, Mary Claire Silvestre, Alain Laval, Balajee Rajagopalan, Robert F. Teagle, Eswar Ramanathan, Nobuyuki Takahashi, Sohana Khanal

Publikováno v: 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

The BEOL Barrier-Seed deposition process is a key component in achieving the desired electrical and electro-migration performance while balancing the step coverage. The process also has a multifold impact on wafer yield parametric since it serves mul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c171f5cc5531e1dd0b7472867e52055
https://doi.org/10.1109/asmc.2016.7491165

Spin-dependent transport in a nanopillar non-local spin valve

Autor: Takashi Kimura, J.-B. Laloë, Yoshichika Otani, T. Yang

Publikováno v: Journal of Magnetism and Magnetic Materials. 321:3829-3832

We investigate the injection of a pure spin current into a non-magnetic Cu wire in a lateral spin valve. We detect the spin accumulation occurring at the interfaces between the magnetic nanopillars and the non-magnetic wire in the non-local geometry.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e74d1a0d5140b564ef85200bb13a3f1
https://doi.org/10.1016/j.jmmm.2009.07.045

Spontaneous symmetry breaking in vortex systems with two repulsive lengthscales

Autor: W.M. Desoky, Milorad V. Milošević, P. J. Curran, A. Chaves, J.-B. Laloë, Jagadeesh S. Moodera, Simon J. Bending

Publikováno v: Curran, P J, Desoky, W M, Milošević, M V, Chaves, A, Laloë, J B, Moodera, J S & Bending, S J 2015, ' Spontaneous symmetry breaking in vortex systems with two repulsive lengthscales ', Scientific Reports, vol. 5, 15569, pp. 1-9 . https://doi.org/10.1038/srep15569
Scientific reports
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Scientific Reports

Scanning Hall probe microscopy (SHPM) has been used to study vortex structures in thin epitaxial films of the superconductor MgB[subscript 2]. Unusual vortex patterns observed in MgB[subscript 2] single crystals have previously been attributed to a c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e3beded610e74c9bb613958cd56103b
https://doi.org/10.1038/srep15569

A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology

Autor: Lisa F. Edge, C. Ortolland, W. Lai, J. Muncy, R. Divakaruni, J.-B. Laloë, David L. Rath, R. Bingert, J. Cutler, Ruqiang Bao, Vijay Narayanan, M. Krishnan, X. Zhang, Vamsi Paruchuri, J. Y. Huang, Ravikumar Ramachandran, X. Chen, Michael A. Gribelyuk, Haihong Wang, Keith Kwong Hon Wong, Y. Zhang, D. S. Salvador, Unoh Kwon, Il-Ryong Kim, Michael P. Chudzik, L. Econimikos, Y. Liu, Siddarth A. Krishnan, L. D. Thanh

Publikováno v: 2012 Symposium on VLSI Technology (VLSIT).

Replacement metal gate (RMG) process requires gate fill with low resistance materials on top of work function tuning metals. Conventional titanium (Ti)-aluminum (Al) based RMG metal fill scheme for low resistance gate formation becomes challenging wi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::076a7abde5a67e6679f8b5e3f70e0314
https://doi.org/10.1109/vlsit.2012.6242445