Zobrazeno 1 - 10
of 50
pro vyhledávání: '"J. de Pontcharra"'
Autor:
Alexis Farcy, D. Bouchu, F. Gaillard, Romano Hoofman, L.G. Gosset, Joaquim Torres, Pascal Bancken, V. Nguyen Hoang, Greja Johanna Adriana Maria Verheijden, J. Michelon, T. Vandeweyer, Ph. Lyan, Roel Daamen, J. de Pontcharra, Vincent Arnal
Publikováno v:
Microelectronic Engineering. 82:321-332
The integration of air gaps for advanced Cu interconnects is mandatory to achieve the performances required for high performance integrated circuits (ICs). The interest of their introduction as a function of the chosen architecture, i.e. hybrid (i.e.
Publikováno v:
IEEE Transactions on Nuclear Science. 47:654-658
The tolerance to both ionizing dose and displacement damage of a Quasi-Self Aligned (QSA) single polysilicon emitter bipolar technology fabricated with a 0.35 /spl mu/m design rule CMOS is presented. In this work we explore the effect of dose rate, h
Publikováno v:
IEEE Transactions on Electron Devices. 44:2091-2097
In this paper, we report the state-of-the-art results obtained in quasi-self-aligned (QSA) single polysilicon NPN bipolar transistors fabricated within a low-complexity 0.5-/spl mu/m CMOS process. Our devices demonstrate nearly ideal static character
Publikováno v:
Microelectronic Engineering. 28:75-78
Macroscopic effects are observed on MOS transistors after low temperature ionizing irradiation : the dose dependence of the threshold voltage shift and significantly a novel dose rate dependence. The microscopic origin of these effects is thorougly d
Autor:
F. Gaillard, S. Orain, O. Louveau, L.G. Gosset, Ph. Lyan, O. Cueto, Joaquim Torres, Gérard Passemard, J. de Pontcharra, D. Bouchu, R. Gras
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
The introduction of air gaps in multi-level Cu interconnect stacks will be mandatory to achieve high performance signal propagation characteristics for advanced technology node. In this paper, air cavities were successfully introduced in a two-metal
Autor:
R. Truche, J.L. Martin, J. Gautier, E. Delevoye, J. Montaron, E. Dupont-Nivet, J.P. Blanc, J. Bonaime, J. de Pontcharra
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
Development of a fully CMOS and bipolar compatible JFET process on SIMOX is reported. The main characteristics obtained on a two-junction-type JFET realized in 1- mu m silicon epitaxy on SOI material are presented. A mesa-structure has been chosen fo
Autor:
M. Dentan, K. Rodde, M. Rouger, C. Leroux, J.P. Blanc, D. Lachartre, C. Le Mouellic, Ph. Abbon, J. Montaron, A. Dantec, R. Truche, F. Lugiez, O. Musseau, E. Delevoye-Orsier, J. Martinez, Jean-Luc Leray, J.L. Pelloie, O. Flament, B. Paul, T. Corbiere, J. de Pontcharra, O. Faynot, Eric Delagnes, P. Borgeaud, J.M. Guebhard, G. Festes, N. Fourches, A. Vitez
Publikováno v:
1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255).
DMILL technology integrates mixed analog-digital very rad-hard (>10 Mrad and >10/sup 14/ neutron/cm/sup 2/) vertical bipolar, 0.8 /spl mu/m CMOS and 1.2 /spl mu/m PJFET transistors on SOI substrate. In this paper, after a presentation of the DMILL pr
Autor:
A. Monroy, A. Chantre, Daniel Gloria, J. de Pontcharra, M. Laurens, Michel Marty, C. Morin, Roland Pantel, S. Jouan, J.L. Regolini, Didier Dutartre, M. Mouis
Publikováno v:
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
A low complexity 0.35 /spl mu/m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (f/sub max/ up to 71 GHz) are obtained, opening the
Autor:
T. Gravier, L. Ailloud, B. Blanchard, J. de Pontcharra, L. Vendrame, D. Thomas, E. Behouche, Alain Chantre
Publikováno v:
Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.
A low cost high performance 0.5 /spl mu/m single-poly quasi self-aligned npn bipolar technology is described. The devices feature record f/sub T/ and f/sub max/ values of 30 GHz and 40 GHz respectively, with 4.2 V BV/sub CEO/ well into the range of p
Autor:
S. Niel, O. Rozeau, L. Ailloud, C. Hernandez, P. Llinares, M. Guillermet, J. Kirtsch, A. Monroy, J. de Pontcharra, G. Auvert, B. Blanchard, M. Mouis, G. Vincent, A. Chantre
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
We report the fabrication of high performance single-polysilicon npn bipolar transistors using a low cost 200 mm 0.35 /spl mu/m bipolar technology. The devices feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz re