Zobrazeno 1 - 10
of 138
pro vyhledávání: '"J. da Fonseca"'
Autor:
H. Mehdi, M. Martin, C. Jany, L. Virot, J. M. Hartmann, J. Da Fonseca, J. Moeyaert, P. Gaillard, J. Coignus, C. Leroux, C. Licitra, B. Salem, T. Baron
Publikováno v:
AIP Advances, Vol 11, Iss 8, Pp 085028-085028-7 (2021)
Near infrared light detection is fundamental for sensing in various application fields. In this paper, we detail the properties of InGaAs/AlGaAs multiple quantum well (MQW) photodetectors (PDs) monolithically integrated by direct epitaxy on 300 mm Si
Externí odkaz:
https://doaj.org/article/447f62d06e7b4df49a42f1405facc845
Autor:
H. Mehdi, M. Martin, S. David, J. M. Hartmann, J. Moeyaert, M. L. Touraton, C. Jany, L. Virot, J. Da Fonseca, J. Coignus, D. Blachier, T. Baron
Publikováno v:
AIP Advances, Vol 10, Iss 12, Pp 125204-125204-6 (2020)
Vertical GaAs p–i–n photodetectors epitaxially grown on GaAs(001), Ge/Si(001), and Si(001) substrates are reported. The performances of such photodetectors were investigated as a function of threading dislocation density in the stacks. A low dark
Externí odkaz:
https://doaj.org/article/a299e05da93a4988ae3745c8e7d0fe9a
Autor:
P. Gaillard, A. Ndiaye, B. Ben Bakir, P. Le Maitre, J. Da Fonseca, J. M. Hartmann, M. Martin, J. Moeyaert, H. Mehdi, T. Baron, C. Jany
Publikováno v:
IEEE Photonics Technology Letters. 35:101-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53d97ce1861efdca0395b4bc8ffae616
https://doi.org/10.1109/lpt.2022.3225219
https://doi.org/10.1109/lpt.2022.3225219
Autor:
S. Menezo, Z. Yong, K. Froberger, T. Thiessen, J. C.C. Mak, F. Denis-le Coarer, M. Peyrou, L. Milord, J. Da Fonseca, C. Jany, P. Grosse, F. Mazur, J. K. S. Poon
Publikováno v:
Optical Fiber Communication Conference (OFC) 2022.
We report a silicon IQ modulator integrated with a III-V/Si semiconductor optical amplifier (SOA) at the output. We demonstrate 40GBaud PAM4 operation of one of the Mach Zehnder modulators with an SOA gain of 10dB.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0add6221f905b62c8041a3f4d0cce8d4
https://doi.org/10.1364/ofc.2022.th3c.2
https://doi.org/10.1364/ofc.2022.th3c.2
Autor:
Léopold Virot, Mickael Martin, Christophe Licitra, J. Da Fonseca, P. Gaillard, Christophe Jany, J. Coignus, J.M. Hartmann, Thierry Baron, J. Moeyaert, Hussein Mehdi, Charles Leroux, Bassem Salem
Publikováno v:
AIP Advances
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
AIP Advances, Vol 11, Iss 8, Pp 085028-085028-7 (2021)
AIP Advances, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
AIP Advances, Vol 11, Iss 8, Pp 085028-085028-7 (2021)
AIP Advances, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
Near infrared light detection is fundamental for sensing in various application fields. In this paper, we detail the properties of InGaAs/AlGaAs multiple quantum well (MQW) photodetectors (PDs) monolithically integrated by direct epitaxy on 300 mm Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20530fb56580d0422a0a7005c4ce3a24
https://hal.univ-grenoble-alpes.fr/hal-03449032
https://hal.univ-grenoble-alpes.fr/hal-03449032
Akademický článek
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Autor:
Christophe Jany, V. Reboud, J. Da Fonseca, Olivier Renault, Ph. Rodriguez, M. Bouschet, A. Chelnokov, J.M. Hartmann, Andrea Quintero, Eugénie Martinez, Lara Casiez, J.M. Fabbri
Publikováno v:
Microelectronic Engineering. 253:111663
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f28803ee0088a439966c02adebc023bb
https://doi.org/10.1016/j.mee.2021.111663
https://doi.org/10.1016/j.mee.2021.111663
Autor:
Torrey Thiessen, G. El-Zammar, Pierre Brianceau, Joyce K. S. Poon, J. Da Fonseca, Sylvie Menezo, Jason C. C. Mak, Bertrand Szelag, Christophe Jany
Publikováno v:
45th European Conference on Optical Communication (ECOC 2019)
Scopus-Elsevier
Scopus-Elsevier
We present a fabrication flow integrating lasers at the backside of silicon-on-insulator wafers. It is expected to be compatible with integration of other material-layers and reduce the variance of lasers performance. A DFB laser fabricated according
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50077daa85066dbc72971a8099dc7ef
https://hdl.handle.net/21.11116/0000-0008-2266-F21.11116/0000-0008-2268-D
https://hdl.handle.net/21.11116/0000-0008-2266-F21.11116/0000-0008-2268-D
Autor:
Christophe Jany, V. Amalberg, Quentin Rafhay, Magali Gregoire, F. Boyer, Bertrand Szelag, J. Da Fonseca, Ph. Rodriguez
Publikováno v:
2019 IEEE 16th International Conference on Group IV Photonics (GFP).
Electrical properties of CMOS-compatible titanium contacts on n-InP and p-In0.53Ga0.47As using 300 mm tools, in the scope of integrating them on III-V / Si hybrid lasers, are presented. Electrical behaviors after i) processing, ii) integration and ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::365641fc6158d57dafe0bdc46247fddb
https://doi.org/10.1109/group4.2019.8926115
https://doi.org/10.1109/group4.2019.8926115
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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