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pro vyhledávání: '"J. Zarpellon"'
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Autor:
S. M. Chérif, Nicolas Reyren, D. H. Mosca, Yves Roussigné, Henri Jaffrès, Stéphane Collin, J. Zarpellon, Mohamed Belmeguenai, Laurent Vila, Sachin Krishnia, J.-M. George, N. Figueiredo-Prestes
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2021, 119 (3), pp.032410. ⟨10.1063/5.0050641⟩
Applied Physics Letters, American Institute of Physics, 2021, 119 (3), pp.032410. ⟨10.1063/5.0050641⟩
We present experimental and numerical results on the magnetization reversal induced by spin–orbit torques of micronic disks of a ferromagnetic multilayer with perpendicular magnetic anisotropy on top of a Pt track: Pt (6 nm)/[Co(0.2 nm)/Ni(0.6 nm)]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96fa67eaa40a96a2197c3bb2d7bd1b8f
https://hal.archives-ouvertes.fr/hal-03318074
https://hal.archives-ouvertes.fr/hal-03318074
Autor:
Nicolas Reyren, Yves Roussigné, Sachin Krishnia, S. M. Chérif, J. Zarpellon, N. Figueiredo-Prestes, Mohamed Belmeguenai, Laurent Vila, D. H. Mosca, Henri Jaffrès, J.-M. George, Stéphane Collin
Publikováno v:
Applied Physics Letters. 119:159901
Autor:
Hugo F. Jurca, Paulo Fernando Papaleo Fichtner, Karim Bouzehouane, Zacarias Eduardo Fabrim, J.-M. George, J. Zarpellon, D. H. Mosca, J. Varalda, Cyrile Deranlot, Wido H. Schreiner, Nicholas Figueiredo-Prestes, V. Fernandes
Publikováno v:
RSC Advances. 6:56785-56789
Materials with perpendicular magnetic anisotropy (PMA) are of great interest as they have potential applications in high-density non-volatile memories, spin logic devices, and other spintronics applications. To attain perpendicular anisotropy, a numb
Autor:
Hugo F. Jurca, J. Zarpellon, M. D. Martins, D. H. Mosca, Cyrile Deranlot, Irineu Mazzaro, Nicholas Figueiredo-Prestes, Ronei Cardoso de Oliveira, Daniel da Silva Costa, J.-M. George, Mariana Andrade Boense Tavares
Publikováno v:
Journal of Applied Physics. 126:183903
The development of multifunctional materials that combine optical transparency to room-temperature magnetism is still a great challenge. Here, we present an investigation on the room-temperature ferromagnetism of ceria (CeO 2) nanocrystalline films i
Autor:
Zacarias Eduardo Fabrim, J. Varalda, J. Zarpellon, H. F. Jurca, A. W. Arins, Wido H. Schreiner, Paulo Fernando Papaleo Fichtner, D. H. Mosca
Publikováno v:
Journal of Magnetism and Magnetic Materials. 381:83-88
MnGa films of few nanometer thickness with tetragonal zinc-blende (TZB) structure were grown by molecular beam epitaxy on GaAs(111) substrates. These ultrathin films have high magnetization at room temperature with magnetic moment as high as 3.2 μ B
Publikováno v:
Thin Solid Films. 570:57-62
We investigate the chemical reactivity of ultra-thin films of Mn on As-terminated (111) GaAs surface kept at ultra-high vacuum conditions in the temperature interval ranging from room temperature to 400 °C. The experiments were performed using a cus
Autor:
A. W. Arins, J. Varalda, J. Zarpellon, H. F. Jurca, W. H. Schreiner, I. L. Graff, D. H. Mosca
Publikováno v:
IEEE Transactions on Magnetics. 49:5595-5598
MnGa alloys with compositions in the range of 52 to 60 at. % Mn were grown by molecular beam epitaxy (MBE) on GaAs(111)B substrates. High quality epilayers were obtained at growth temperatures between 25 and 250 °C. Epilayers are stabilized by post-
Autor:
H. F. Jurca, J. Zarpellon, Ney Mattoso, J. J. Klein, Waldemar A. A. Macedo, J.D. Ardisson, D. H. Mosca, Wido H. Schreiner
Publikováno v:
Journal of Colloid and Interface Science. 316:510-516
In this work we describe the fabrication of FeCo alloy (less than 10 at% Co) thin films from aqueous ammonium sulfate solutions onto n-type Si(111) substrates using potentiostatic electrodeposition at room temperature. The incorporation of Co into th
Autor:
Cyrile Deranlot, Quang Ha Duong, Frank Freimuth, J. Zarpellon, Frougier Julien, D. H. Mosca, H. Jaffrès, Xavier Marie, Pierre Renucci, Aristide Lemaître, J.-M. George
Publikováno v:
Physical review / B 86(20), 205314 (2012). doi:10.1103/PhysRevB.86.205314