Zobrazeno 1 - 2
of 2
pro vyhledávání: '"J. Z. Witowski"'
Autor:
Peter Zurcher, Robert E. Jones, Bo Jiang, J. Z. Witowski, D. J. Taylor, S.J. Gillespie, Y. T. Lii, P.Y. Chu
Publikováno v:
Integrated Ferroelectrics. 12:23-31
Ferroelectric SiBi2Ta2O9 capacitors with Pt electrodes were measured to have a non-volatile polarization of 6.6 μC/cm2 using 3 V pulse polarization measurements, a leakage current of less than 3×10−9 A/cm2 at 3 V, and a breakdown of voltage great
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa16196fef66d92dc04750dab7fb0d5f
https://doi.org/10.1080/10584589608225745
https://doi.org/10.1080/10584589608225745
Autor:
Peter Zurcher, J. Z. Witowski, S.J. Gillespie, Robert E. Jones, Y. T. Lii, Papu D. Maniar, R. Moazzami, P.Y. Chu
Publikováno v:
Thin Solid Films. 270:584-588
Non-volatile ferroelectric random access memories (FERAM) offer substantial advantages over conventional floating-gate electrically erasable programmable read only memory (EEPROM) and flash EEPROM devices. FERAMS can be written at high speeds (≈100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::338e3036af5d2622917f06776d3c4309
https://doi.org/10.1016/0040-6090(95)06754-x
https://doi.org/10.1016/0040-6090(95)06754-x