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pro vyhledávání: '"J. Woitok"'
Akademický článek
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Autor:
Helmut Sitter, Clemens Simbrunner, J. Bethke, Alberta Bonanni, K. Schmidegg, Klaus Lischka, A. Kharchenko, J. Woitok
Publikováno v:
Journal of Crystal Growth. 298:243-245
Presently, we are able to measure in situ X-ray diffraction and spectroscopic ellipsometry simultaneously on rotating samples during the deposition process in our AIXTRON 200 RF-S reactor using a commercial available PANalytical Cu ceramic tube as X-
Autor:
Q. Liu, J. Woitok, A. Hardt, H. Lakner, W. Taudt, J. Xu, H. Hamadeh, H. Körfer, Michael Heuken
Publikováno v:
Journal of Crystal Growth. 191:663-672
The effect of different surface treatments of GaAs substrates on the structural and optical properties of ZnSe were studied for metalorganic vapour-phase epitaxy (MOVPE). Especially, the correlation of the chemical etching process prior to the growth
Publikováno v:
Semiconductor Science and Technology. 13:428-432
quantum well structures of high quality were grown by molecular beam epitaxy. The structural and electrical quality was characterized by x-ray diffractometry, Raman spectroscopy and Hall transport measurements. When an optimized buffer layer was used
Publikováno v:
Thin Solid Films. 319:57-61
The effect of layer thickness on the structural and electro-optical properties of MOVPE grown lattice matched Zn 1− y Mg y S x Se 1− x /GaAs layers were examined by high resolution X-ray diffractometry (HRXRD) and cathodoluminescence (CL) combine
Publikováno v:
Journal of Crystal Growth. :134-138
The correlation of the properties of ZnMgSSe/ZnSe heterostructures to the Mg and S content as well as to the perpendicular strain of the ZnMgSSe layer was studied by high-resolution X-ray diffractometry (HRXRD) and photoluminescence spectroscopy (PL)
Autor:
J. Xu, G. P. Yablonskii, J. Müller, Michael Heuken, Holger Kalisch, A. L. Gurskii, H. Hamadeh, J. Woitok
Publikováno v:
Journal of Electronic Materials. 26:1256-1260
We report on the growth of ZnMgSSe/ZnSSe/ZnSe heterostructures in a low pressure metalorganic vapor phase epitaxy (MOVPE) system at 400 hPa and a growth temperature of 330°C. The precursor combination was dimethylzinc(triethylamine adduct), ditertia
Publikováno v:
Journal of Crystal Growth. 170:732-737
MOVPE grown ternary and quaternary Ga x In 1− x As z P 1− z heterostructures on InP substrates are increasingly used for the fabrication of, e.g. optoelectronic devices like modulators. Two of the key parameters for the performance of such device
Publikováno v:
Journal of Crystal Growth. 170:772-776
GaSb AlSb , InAs AlSb and InAs InP 0.69 Sb 0.31 multi-quantum well structures were grown successfully by metalorganic vapor phase epitaxy. The good structural and optical quality was characterized by a combination of Raman spectroscopy and X-ray diff
Publikováno v:
Journal of Crystal Growth. 167:415-420
Ternary AlxGa1 − xSb layers and AlSb/GaSb multi-quantum-well structures were grown by low pressure metalorganic vapor phase epitaxy (LP-MOVPE). First, a comparative investigation on the GaSb and AlSb growth kinetics with the standard methyl and eth