Zobrazeno 1 - 10
of 65
pro vyhledávání: '"J. Windscheif"'
Publikováno v:
Journal of Applied Physics. 73:1430-1434
The temperature Tsube of photoexcited carriers in semi-insulating GaAs wafers is determined with high lateral resolution by topographic measurement of the spectrally selected band-to-band recombination luminescence intensity IsubPL. It is also calcul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7770786ba958eee4096c3be900609827
https://doi.org/10.1063/1.353241
https://doi.org/10.1063/1.353241
Publikováno v:
Semiconductor Science and Technology. 7:A27-A31
Low-temperature photoluminescence topography has been used to monitor local variations in composition of In1-yGayP and AlxGa1-xAs layers which were grown lattice-matched on semi-insulating LEC GaAs substrates by MOCVD. Whereas the in content varies b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf19e287e373c202e4dd1e67b5cf45e
https://doi.org/10.1088/0268-1242/7/1a/005
https://doi.org/10.1088/0268-1242/7/1a/005
Publikováno v:
Semiconductor Science and Technology. 6:995-1001
A method based on time-dependent measurement of charge transients has been developed to evaluate the specific resistivity of semi-insulating wafers quickly, non-destructively and with good lateral resolution. The material is inserted between capaciti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce39824cd6f2b652a95af3ec5487b732
https://doi.org/10.1088/0268-1242/6/10/008
https://doi.org/10.1088/0268-1242/6/10/008
Publikováno v:
Applied Surface Science. 50:480-484
The variation of material properties along the growth axis of single crystal LEC GaAs ingots is studied. Parameters investigated include concentration and lateral variation of EL2, photoluminescence intensity, resistivity, the concentration of extrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9a7a95465e5fabab6b1ecfa5ed53099
https://doi.org/10.1016/0169-4332(91)90222-6
https://doi.org/10.1016/0169-4332(91)90222-6
Autor:
J. Rosenzweig, Michael Schlechtweg, Volker Hurm, B. Raynor, Z. Lao, J. Windscheif, M. Ludwig, Wolfgang Bronner, W. Benz, Klaus Köhler, G. Kaufel, T. Fink
The first 20 Gbit/s 1.3-1.55 /spl mu/m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using AlGaAs/GaAs HEMTs. At a wavelength of 1.3 /spl mu/m, the integrated InGaAs MSM photodiode has a responsivity of 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1349085206c83ab59f809fcad75e1e74
https://publica.fraunhofer.de/handle/publica/189855
https://publica.fraunhofer.de/handle/publica/189855
Publikováno v:
MRS Proceedings. 325
The characterization of III-V compound semiconductor substrates and epitaxial layers with photoluminescence imaging is reviewed. The luminescence patterns of semi-insulating GaAs are dominantly determined by the concentration and distribution of nonr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afc010c710cfc1781c625f4a9d752807
https://doi.org/10.1557/proc-325-409
https://doi.org/10.1557/proc-325-409
Spectrally and spatially resolved low‐temperature photoluminescence topography has been applied to investigate the lateral variation of impurities in nominally undoped epitaxial GaAs layers. The concentrations of both shallow donors and acceptors e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cbfb7af58cf5c27075b96dc498a3c05
https://publica.fraunhofer.de/handle/publica/181814
https://publica.fraunhofer.de/handle/publica/181814
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
The capacitive charge transient measurement technique generates laterally resolved two-dimensional resistivity topograms of wafers with diameters up to 150 mm. The method is applicable to semi-insulating substrates with resistivities between 10/sup 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fab80eac9e1a74cd82e8f0fa9d48b2
https://doi.org/10.1109/sim.1992.752695
https://doi.org/10.1109/sim.1992.752695
Publikováno v:
Solid State Communications. 28:911-914
By resonant Raman measurements at low temperatures intervalley scattering is demonstrated to be an efficient relaxation mechanism of the free indirect exciton in AgBr. The observed strongly enhanced scattering lines are attributed to TA(X) and LA(X)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a6bd63d26815cebca5e62309fa4245
https://doi.org/10.1016/0038-1098(78)90109-6
https://doi.org/10.1016/0038-1098(78)90109-6
Autor:
L. Pu-lin, Ch. Uihlein, J. Schneider, J. Weber, G. Aszodi, Ulrich Kaufmann, J. Windscheif, H. Ennen
Publikováno v:
Physical Review B. 31:7767-7771
Ytterbium-doped InP emits a characteristic luminescence band near 1.0 \ensuremath{\mu}m, arising from intra-4f-shell transitions of ${\mathrm{Yb}}^{3+}$(4${\mathrm{f}}^{13}$). A Zeeman analysis of the complex set of emission lines, in magnetic fields
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30fe6f09dc5abb0ef2b4126da5903aea
https://doi.org/10.1103/physrevb.31.7767
https://doi.org/10.1103/physrevb.31.7767