Výsledky vyhledávání

Verification of CDM circuit simulation using an ESD evaluation circuit

Autor: M. Etherton, S. Mettler, Wolfgang Fichtner, J. Willemen, Wolfgang Wilkening, N. Qu

Publikováno v: Microelectronics Reliability. 47:1036-1043

In this work, the capability of circuit simulation to predict CDM robustness of integrated circuits and to determine weak circuit elements is studied. The applicability is demonstrated for an ESD evaluation circuit designed to enable the analysis and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dcd74261cc2130b1387dcb57f88f6a26
https://doi.org/10.1016/j.microrel.2006.11.006

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A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress

Autor: N. Qu, Lucia Zullino, Antonio Andreini, V. Dubec, Erich Gornik, Dionyz Pogany, M. Blaho, J. Willemen, Wolfgang Wilkening, Sergey Bychikhin

Publikováno v: Microelectronics Reliability. 43:1557-1561

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0bd483e26fe8e54b629e323f34a9fb24
https://doi.org/10.1016/s0026-2714(03)00274-9

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Study of CDM Specific Effects for a Smart Power Input Protection Structure

Autor: Heinrich Wolf, Wolfgang Fichtner, Lucia Zullino, M. Etherton, Antonio Andreini, S. Mettler, Mariano Dissegna, Roberto Stella, J. Willemen, Horst Gieser, N. Qu, Wolfgang Wilkening

ESD failure mechanisms, specific for charged device model (CDM) stress, are discussed for an input protection structure in a smart power technology showing unexpected dependency of CDM robustness on design variations. This paper demonstrates that fac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df40132e10a9de4742f97a76e6706094
https://publica.fraunhofer.de/handle/publica/207470

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Electrical characterisation of a power SO-package in the context of electrostatic discharge

Autor: I. Doerr, Horst Gieser, Werner John, Gerhard Fotheringham, Herbert Reichl, Wolfgang Wilkening, F. Salhi, A. Andreini, J. Willemen, G. Sommer, Heinrich Wolf

Publikováno v: 2003 IEEE International Symposium on Electromagnetic Compatibility, 2003. EMC '03..

The electrostatic discharge (ESD) sensitivity of integrated circuits with respect to the charged device model depends strongly on the package. Electrical characteristics of a package are, if at all extracted, application specific. They depend on the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b8da5dfb79c0c54908489f81e376da16
https://doi.org/10.1109/icsmc2.2003.1428273

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Quantitative determination of TCR cross-reactivity using peptide libraries and protein databases

Autor: H S, Hiemstra, P A, van Veelen, S J, Willemen, W E, Benckhuijsen, A, Geluk, R R, de Vries, B O, Roep, J W, Drijfhout

Publikováno v: European journal of immunology. 29(8)

A single T cell clone can be activated by many different peptides in the context of a particular HLA molecule. To quantify the number of peptides that can be recognized by a CD4(+) T cell clone, we screened a one-bead-one-peptide synthetic peptide li

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::e3b94cbd0172e1cfeee7d79bfe6637ed
https://pubmed.ncbi.nlm.nih.gov/10458750

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Characterization and modeling of transient device behavior under CDM ESD stress

Autor: Antonio Andreini, H. Gieser, N. Qu, Wolfgang Wilkening, V. De Heyn, W. Soppa, Guido Groeseneken, M. Etherton, R. Stella, Lucia Zullino, Kai Esmark, E. Morena, J. Willemen, Heinrich Wolf, Wolfgang Stadler, S. Mettler

Publikováno v: Scopus-Elsevier

Very-fast high-current pulses that occur during charged device model (CDM) ESD events lead to transient voltage overshoots in forward- and reverse-biased pn-junctions, called forward recovery and dynamic reverse overshoot. To improve the device model

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e71e2888f7c1c006fb9efb4c5652c52
http://www.scopus.com/inward/record.url?eid=2-s2.0-84945237536&partnerID=MN8TOARS

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Test circuits for fast and reliable assessment of CDM robustness of I/O stages

Publikováno v: Scopus-Elsevier

CDM hardening during the development of technology, devices, libraries and finally products differs significantly from the process well-established for HBM. This paper introduces a method on the basis of specialized CDM test structures including prot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09f3cf6d90161de43a84831208a0184d
http://www.scopus.com/inward/record.url?eid=2-s2.0-84945206068&partnerID=MN8TOARS

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