Zobrazeno 1 - 10
of 564
pro vyhledávání: '"J. Wellmann"'
Publikováno v:
Advances in Radio Science, Vol 9, Pp 383-389 (2011)
This paper deals with the development of an advanced parametrical modelling concept for packaging components of a 24 GHz radar sensor IC used in automotive driver assistance systems. For fast and efficient design of packages for system-in-package mod
Externí odkaz:
https://doaj.org/article/43cc592a316d45f6aa9800f002a78737
Publikováno v:
Crystals, Vol 13, Iss 11, p 1590 (2023)
Compared to bulk silicon carbide (SiC) wafers, SiC-on-insulator (SiCOI) substrates enable new device designs of electronic switches as well as novel photonic applications. One application is a micro-resonator for the usage in a Kerr frequency comb. F
Externí odkaz:
https://doaj.org/article/e0aace5a68d4426fa7016b0ef9750d10
Autor:
Peter J. Wellmann
Publikováno v:
Discover Materials, Vol 1, Iss 1, Pp 1-8 (2021)
Abstract Throughout human history, most further developments or new achievements were accompanied by new materials or new processes that enabled the technologic progress. With concrete devices and applications in mind, synthesis and subsequent treatm
Externí odkaz:
https://doaj.org/article/5ed47224cbc14cdd93d0ffc0a71865d5
Autor:
Gaetano Calogero, Ioannis Deretzis, Giuseppe Fisicaro, Manuel Kollmuß, Francesco La Via, Salvatore F. Lombardo, Michael Schöler, Peter J. Wellmann, Antonino La Magna
Publikováno v:
Crystals, Vol 12, Iss 12, p 1701 (2022)
Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integ
Externí odkaz:
https://doaj.org/article/fe6781160b474a6598370251a66ff35a
Publikováno v:
Crystal Research and Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5624f26cfc75bc9d7508eb6733c7f47c
https://doi.org/10.1002/crat.202300034
https://doi.org/10.1002/crat.202300034
Akademický článek
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Akademický článek
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Autor:
Jonas Ihle, Peter J. Wellmann
Publikováno v:
Materials Science Forum. 1062:79-83
Different initial process steps during PVT crystal growth of SiC were monitored with a mass spectrometer. To measure the gas phase composition in the PVT growth machine during these steps the continuously pumped exhaust gas was analyzed by a quadrupo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e8d990f380cd89202cd36c5abb4a07
https://doi.org/10.4028/p-gt22u6
https://doi.org/10.4028/p-gt22u6
Autor:
Manuel Kollmuss, Michael Schöler, Ruggero Anzalone, Marco Mauceri, Francesco La Via, Peter J. Wellmann
Publikováno v:
Materials Science Forum. 1062:74-78
One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable seeding material for sublimation growth methods such as PVT. We present the growth of large area cubic silicon carbide material, up to a diameter of 100 mm, wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7db37f82f0fe5bbd1394a7e453f9eb05
https://doi.org/10.4028/p-6ef373
https://doi.org/10.4028/p-6ef373
Autor:
Manuel Kollmuss, Johannes Köhler, Hai Yan Ou, Wei Chen Fan, Didier Chaussende, Rainer Hock, Peter J. Wellmann
Publikováno v:
Materials Science Forum. 1062:119-124
3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, the precursors silane and propane are used to deposit silicon carbide films at T < 1200°C. The structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::152ac9a92db5bb30f6f5b17cce57a7b3
https://doi.org/10.4028/p-nshb40
https://doi.org/10.4028/p-nshb40