Zobrazeno 1 - 10
of 13
pro vyhledávání: '"J. W. Strane"'
Publikováno v:
Journal of Applied Physics. 76:3656-3668
We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::171d28abf7b18dcc9ecfb3a5387c7664
https://doi.org/10.1063/1.357429
https://doi.org/10.1063/1.357429
Publikováno v:
Journal of Applied Physics. 76:257-263
The reaction kinetics of Ti films on SiO2 were investigated using Rutherford backscattering spectrometry, x‐ray diffraction, Auger electron spectroscopy, and transmission electron microscopy. Consistent with earlier studies, the reaction results in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc4c21f3acc2168a81da2b15340b7bd
https://doi.org/10.1063/1.357137
https://doi.org/10.1063/1.357137
Publikováno v:
MRS Online Proceedings Library. 265:205-210
Co-evaporated Cu-Ti films on thermally-oxidized Si substrates were annealed in vacuum at temperatures between 300 and 700° C. Reactions within the films and between film and substrate were monitored by Rutherford backscattering spectrometry, X-ray d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1b3ba358dfdb5399423e3c360409377
https://doi.org/10.1557/proc-265-205
https://doi.org/10.1557/proc-265-205
Autor:
C.C. Theron, J. W. Strane, J. W. Mayer, T. K. Marais, Jian Li, S. W. Russell, Stella Q. Hong, R. Pretorius
Publikováno v:
Journal of Applied Physics. 72:2810-2816
First phase formation has been determined in Cu binary thin film systems with Ti, Zr, Mg, Sb, Pd, and Pt using transmission electron microscopy and Rutherford backscattering spectrometry. CuTi, CuZr, CuMg2, Cu2Sb, Cu3Pd, and Cu3Pt are the first phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84b831b3a312b701533b824dcc4ff6e4
https://doi.org/10.1063/1.351533
https://doi.org/10.1063/1.351533
Publikováno v:
Applied Physics Letters. 66:1160-1162
Raman spectroscopy is used to characterize the microscopic bond structure of Si1−x−yGexCy alloys epitaxially grown on Si substrates by C implantation into Si1−xGex epilayers and subsequent annealing. The Ge and C concentrations in these alloys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d2287991b3712c4caca1400aa8d117e
https://doi.org/10.1063/1.113843
https://doi.org/10.1063/1.113843
Publikováno v:
Applied Physics Letters. 63:2786-2788
We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::814413154dc7e9689a2c984005d0fe42
https://doi.org/10.1063/1.110334
https://doi.org/10.1063/1.110334
Publikováno v:
MRS Proceedings. 309
Amorphous carbon was evaluated as a diffusion barrier between Cu and Si. Samples were annealed at 500 ºC for 1 hour in vacuum. Barrier properties were characterized for metallurgical failure with RBS and XTEM, and electrical properties were characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db97ae534382c7afa30bda560cf8d4a1
https://doi.org/10.1557/proc-309-481
https://doi.org/10.1557/proc-309-481
Publikováno v:
Crucial Issues in Semiconductor Materials and Processing Technologies ISBN: 9789401052030
The stability of titanium-copper and titanium-molybdenum bimetallic layers on A12O3 was studied over the temperature range 700–900 C using vacuum furnace annealing and rapid thermal annealing (RTA). The molybdenum-titanium bilayer was stable over t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e403a35a013586c68ed1835a1d3b933
https://doi.org/10.1007/978-94-011-2714-1_31
https://doi.org/10.1007/978-94-011-2714-1_31
Publikováno v:
MRS Proceedings. 260
A TiN(0)-encapsulated copper structure was made by annealing a Cu-10 at%Ti alloy film evaporated on a SiO2/Si(100) substrate in N2 or NH3 ambiente. During thermal cycling, the tensile stress in the nitridated films is in the range of 200 to 800 MPa.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caaa207d7642aeccecd0517bebc6523b
https://doi.org/10.1557/proc-260-605
https://doi.org/10.1557/proc-260-605
Publikováno v:
MRS Proceedings. 281
The transport of germanium through a co-deposited palladium-silicon layer on epitaxially grown GexSi1−x on Si(100) was studied. The Ge concentration in the UHV-CVD grown GexSi1−x film was x=.14 with a thickness of 155 nm. When the co-deposited la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b90230657ef934dd0639261f8ffbd9c
https://doi.org/10.1557/proc-281-635
https://doi.org/10.1557/proc-281-635