Zobrazeno 1 - 10
of 15
pro vyhledávání: '"J. W. Sleight"'
Autor:
R. T. Gordon, C. E. Murray, C. Kurter, M. Sandberg, S. A. Hall, K. Balakrishnan, R. Shelby, B. Wacaser, A. A. Stabile, J. W. Sleight, M. Brink, M. B. Rothwell, K. P. Rodbell, O. Dial, M. Steffen
Publikováno v:
Applied Physics Letters. 120:074002
Quantum computing relies on the operation of qubits in an environment as free of noise as possible. This work reports on measuring the impact of environmental radiation on lifetimes of fixed frequency transmon qubits with various capacitor pad geomet
Autor:
R. G. Wheeler, J. W. Sleight, William R. Frensley, R. C. Bowen, Mark A. Reed, John N. Randall, E. S. Hornbeck, M. R. Deshpande, Richard J. Matyi
Publikováno v:
Physical Review B. 53:15727-15737
Publikováno v:
Physical Review Letters. 76:1328-1331
Zeeman splitting of the ground state of single impurities in the quantum well of a resonant tunneling heterostructure is reported. We determine the absolute magnitude of the effective magnetic spin splitting factor ${g}_{\ensuremath{\perp}}^{*}$ for
Autor:
R. N. Sacks, R. G. Wheeler, Daniel E. Prober, J. W. Sleight, H. Shtrikmann, Anurag Mittal, Mark W. Keller
Publikováno v:
Physical Review B. 53:R1693-R1696
We have fabricated ballistic cavities from a two-dimensional GaAs electron gas in which the Fermi energy can be varied independent of cavity shape. For each cavity, we have measured the magnetoconductance $G(B)$ of many individual members of an ensem
Autor:
Yung-Chung Kao, Chenjing Lucille Fernando, R. J. Aggarwal, J. W. Sleight, H. L. Tsai, W. M. Duncan, Mark A. Reed, William R. Frensley
Publikováno v:
Physical Review B. 51:10701-10708
Autor:
M. R. Deshpande, P Kozodoy, C.L. Fernando, William R. Frensley, N. H. Dekker, E. S. Hornbeck, J. W. Sleight, Mark A. Reed
Publikováno v:
Semiconductor Science and Technology. 9:1919-1924
Nanometre-scale fabrication techniques, combined with epitaxial resonant tunnelling structures, now routinely allow the study of quasi-0D confined electron systems. In addition to energy level separations that are tunable by the confining potentials,
Autor:
D.J. Millener, Z. Xu, D. R. Gill, J. Seydoux, S. Bart, A. Rafatian, R. L. Stearns, T. Kishimoto, W. von Witsch, J. W. Sleight, P. Pile, R. E. Chrien, L. G. Tang, H. Plendl, Jen-Chieh Peng, J. Reidy, E. V. Hungerford, N. Tsoupas, B. P. Quinn, C. S. Mishra, Kazushige Maeda, R. McCrady, R. J. Sutter
Publikováno v:
Physical Review Letters. 66:2585-2588
Data obtained by the associated production of \ensuremath{\Lambda} hypernuclei through the (${\mathrm{\ensuremath{\pi}}}^{+}$,${\mathit{K}}^{+}$) reaction are presented for a wide range of mass numbers. The special features which make this reaction u
Publikováno v:
Applied Physics Letters. 67:1160-1162
We present a detailed description of the fabrication and operation at room temperature of a novel type of tunnel displacement transducer. Instead of a feedback system it relies on a large reduction factor assuring an inherently stable device. Stabili
Controlled III–V semiconductor cluster nucleation and epitaxial growth via electron‐beam lithography
Publikováno v:
Applied Physics Letters. 66:1343-1345
Controlled registration of InAs clusters and selective‐area growth of InAs thin films on GaAs substrates is achieved via a combined high dose electron beam lithography/metalorganic chemical vapor deposition technique. Auger electron spectroscopy an
Autor:
William R. Frensley, R. J. Matyi, Mark A. Reed, N. H. Dekker, J.L. Huber, Yung-Chung Kao, J. W. Sleight, E. S. Hornbeck, M. R. Deshpande, Chenjing Lucille Fernando
Publikováno v:
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
A novel pre-resonant conductance structure is observed in single and double well GaAs/Ga/sub x/Al/sub 1-x/As resonant tunneling heterostructures. This structure is attributed to single electron tunneling through donor bound states in the quantum well