Zobrazeno 1 - 10
of 1 412
pro vyhledávání: '"J. W. Orton"'
Autor:
Baker, J. M.
Publikováno v:
Science Progress (1933- ), 1969 Jan 01. 57(225), 118-120.
Externí odkaz:
https://www.jstor.org/stable/43423754
Autor:
J. S. S. Whiting
Publikováno v:
Acta Crystallographica Section A. 25:400-400
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345af4ce8b12f817ed14a4f918219296
https://doi.org/10.1107/s0567739469000799
https://doi.org/10.1107/s0567739469000799
Autor:
Ujah, Chika Oliver1,2 chikau@uj.ac.za, Von Kallon, Daramy Vandi1
Publikováno v:
International Journal of Lightweight Materials & Manufacture. Nov2024, Vol. 7 Issue 6, p809-824. 16p.
Autor:
J W Orton
Publikováno v:
Semiconductor Science and Technology. 12:64-68
This paper is concerned with the interpretation of experimental data on free exciton energies in GaN epitaxial films grown on various substrates (sapphire, SiC and GaN). In hexagonal (wurtzite) films the degeneracy in the valence band is completely l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f40037fdbbbf4cd1f8b254c2f291a147
https://doi.org/10.1088/0268-1242/12/1/013
https://doi.org/10.1088/0268-1242/12/1/013
Autor:
J W Orton
Publikováno v:
Semiconductor Science and Technology. 11:1026-1029
The large majority of GaN epitaxial films have been grown on substrates which show both lattice and thermal expansion mismatch and, as a result, are significantly strained. The effect is most readily monitored by measuring exciton energies in photolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b0c4742b67b01c83d38047267c3bea
https://doi.org/10.1088/0268-1242/11/7/009
https://doi.org/10.1088/0268-1242/11/7/009
Autor:
J. W. Orton, D. E. Lacklison, N. Baba-Ali, C. T. Foxon, T. S. Cheng, S. V. Novikov, D. F. C. Johnston, S. E. Hooper, L. C. Jenkins, L. J. Challis, T. L. Tansley
Publikováno v:
Journal of Electronic Materials. 24:263-268
Bearing in mind the problems of finding a lattice-matched substrate for the growth of binary group III nitride films and the detrimental effect of the large activation energy associated with acceptors in GaN, we propose the study of the alloy system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c28e5fe02ca6deca7dbcc9aed5315a
https://doi.org/10.1007/bf02659685
https://doi.org/10.1007/bf02659685
Autor:
J W Orton
Publikováno v:
Semiconductor Science and Technology. 10:101-104
The recent achievement of p-type doping in GaN epitaxial films emphasizes the importance of the acceptor ionization energy with relevance to the application of group III nitrides in visible-light-emitting devices. Measured values of approximately 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ba49f1be3098a883225e09ee76c7f9
https://doi.org/10.1088/0268-1242/10/1/017
https://doi.org/10.1088/0268-1242/10/1/017
Autor:
Chris Boothroyd, A. V. Andrianov, C. T. Foxon, Colin J. Humphreys, Y. Xin, J. W. Orton, Paul D. Brown, T. S. Cheng, A. R. Preston
Publikováno v:
MRS Proceedings. 423
MBE-grown epitaxial GaN deposited at 700°C on {001}, {111}A and B GaAs has been characterised using the combined techniques of transmission electron microscopy (TEM) and photoluminescence (PL). On both { 111 } A and 111 B GaAs substrates, single cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5a0405ab2c066c60812c7701b5d6109
https://doi.org/10.1557/proc-423-311
https://doi.org/10.1557/proc-423-311
Autor:
J. W. Orton
Publikováno v:
The International Journal of Electrical Engineering & Education. 29:380-381
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::744ff851d761ad486a26238af5c7999c
https://doi.org/10.1177/002072099202900419
https://doi.org/10.1177/002072099202900419
Autor:
Vieru, Veacheslav1 (AUTHOR), Gómez‐Coca, Silvia2,3 (AUTHOR), Ruiz, Eliseo2,3 (AUTHOR) eliseo.ruiz@antares.qi.ub.edu, Chibotaru, Liviu F.4 (AUTHOR) liviu.chibotaru@kuleuven.be
Publikováno v:
Angewandte Chemie. 1/8/2024, Vol. 136 Issue 2, p1-19. 19p.