Zobrazeno 1 - 10
of 222
pro vyhledávání: '"J. W. Coburn"'
Publikováno v:
Journal of Physics D: Applied Physics. 39:3272-3284
Comparisons of fluid model predictions with various measurements in an inductively coupled plasma are reported. The gas chemistries used include pure Ar, mixtures of Ar and O2 and mixtures of Ar, O2 and Cl2 for pressures ranging from 10 to 80 mTorr a
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1-8
Ruthenium (Ru) film etching has been studied with O2- and Cl2-containing inductively coupled plasmas to understand the etching mechanism and the relationship between plasma characteristics and the competition between the wall deposition of etch by-pr
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:2508-2516
Si and SiO2 were exposed to c-C4F8 with and without Ar+, and to a mixture of characterized CxFy radical and stable species with and without Ar+. The mixture of CxFy radical and stable species was created from c-C4F8 and Ar plasma and included CF, CF2
Autor:
J. W. Coburn, Jeffrey Chang
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:S145-S151
Over the past decades, our understanding of the fundamental processes occurring in the plasma and at plasma–material interfaces has evolved from being macroscopic and phenomenological to microscopic and mechanistic. This article aims to provide an
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1038-1047
A study of the dissociation of a small concentration of cyclic-C4F8 (c-C4F8) in a predominately argon, low pressure inductively coupled plasma is reported. Measurements of electron density, plasma potential, and electron energy distribution function
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:96-105
TiN films were deposited using radical enhanced atomic layer deposition (REALD) in an ultrahigh vacuum beam system. The REALD cycle used for the film deposition consisted of separate, sequential exposures of TiCl4, deuterium atoms, and nitrogen atoms
Autor:
Eric Kay, J. W. Coburn
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:05C101
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:718-729
In this article, we present comprehensive measurements of the neutral number densities, ion number densities, and the electron energy distribution function in a CF4 inductively coupled plasma at pressures between 1 and 30 mTorr, and deposited powers
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:2680-2684
The surface loss coefficients of CFx (x=1–3) and F radicals have been measured on the stainless steel walls of the differential pumping systems of a plasma reactor. This measurement is made by comparing the beam to background signal ratio of the ra
Publikováno v:
Journal of Applied Physics. 88:3748-3755
Surface recombination coefficients of O and N radicals in pure O2 and N2 plasmas, respectively, have been estimated on the stainless steel walls of a low-pressure inductively coupled plasma reactor. The recombination coefficients are estimated using