Zobrazeno 1 - 8
of 8
pro vyhledávání: '"J. W. Adkisson"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:905-911
Gate dielectric charging issues which occurred during the development of IBM’s 200 mm wafer sub‐0.5μm 16‐Mbyte dynamic random access memory (DRAM) and logic processes are discussed. Using polysilicon conductor antenna structures and fully inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db5da3a96b39c5fd588af99878762ce
https://doi.org/10.1116/1.579850
https://doi.org/10.1116/1.579850
Autor:
C. W. Koburger, W. F. Clark, J. W. Adkisson, E. Adler, P. E. Bakeman, A. S. Bergendahl, A. B. Botula, W. Chang, B. Davari, J. H. Givens, H. H. Hansen, S. J. Holmes, D. V. Horak, C. H. Lam, J. B. Lasky, S. E. Luce, R. W. Mann, G. L. Miles, J. S. Nakos, E. J. Nowak, G. Shahidi, Y. Taur, F. R. White, M. R. Wordeman
Publikováno v:
IBM Journal of Research and Development. 39:215-227
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36f5588818c4ec7b50bca56a15cca381
https://doi.org/10.1147/rd.391.0215
https://doi.org/10.1147/rd.391.0215
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:622-630
The authors describe a monolithic technology for integrating GaAs with Si bipolar devices and demonstrate that such integration can provide improved system performance without degrading individual devices. The technology has been used to implement a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c820c19c9dab4a4eadbe374faea82297
https://doi.org/10.1109/4.217976
https://doi.org/10.1109/4.217976
Publikováno v:
IEEE Electron Device Letters. 9:657-659
The DC performance of GaAs/AlAs heterojunction bipolar transistors (HBTs) grown on silicon substrates with buffer layers ranging from 0 to 5 mu m was investigated. Current gain, collector-emitter breakdown voltage, emitter-base and collector-base dio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f33c58ebb934fc5aa835e02f8215cd
https://doi.org/10.1109/55.20427
https://doi.org/10.1109/55.20427
Publikováno v:
IEEE Electron Device Letters. 10:458-460
The effect of bulk recombination current on the current gain of heterojunction bipolar transistors (HBTs) in GaAs-on-Si has been studied. A thin AlGaAs emitter layer is used to prevent an exposed extrinsic base region, which has previously masked the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6757eb27e63771353a1060939f0a4f97
https://doi.org/10.1109/55.43099
https://doi.org/10.1109/55.43099
Publikováno v:
SPIE Proceedings.
Picosecond photoconductivity by Gallium Arsenide grown directly on silicon and silicon dioxide by Molecular Beam Epitaxy (MBE) has been investigated. Initial results from high speed measurements have demonstrated the potential of this material to ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f134ad805e323230cbecac985882895
https://doi.org/10.1117/12.960118
https://doi.org/10.1117/12.960118
Autor:
James S. Harris, Theodore I. Kamins, K. Nauka, S. M. Koch, G. A. Reid, J. W. Adkisson, S. J. Rosner
Publikováno v:
MRS Proceedings. 116
GaAs layers were grown in recessed silicon trenches for monolithic integration of GaAs and silicon devices. These layers were examined using cathodoluminescence (CL) and transmission electron microscopy (TEM). The CL showed no dependence on distance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e22cddf6dc5c53919aed50c1ae78530
https://doi.org/10.1557/proc-116-99
https://doi.org/10.1557/proc-116-99
Autor:
Theodore I. Kamins, James S. Harris, S. M. Koch, G. A. Reid, J. W. Adkisson, S. J. Rosner, K. Nauka
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:717
GaAs has been grown by molecular‐beam epitaxy in silicon recesses to form a planar structure suitable for integration of GaAs and silicon devices. The layers were examined using scanning electron microscopy, transmission electron microscopy, and ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547c19bb3cb125d319c88788f47b1208
https://doi.org/10.1116/1.584354
https://doi.org/10.1116/1.584354