Zobrazeno 1 - 10
of 71
pro vyhledávání: '"J. W Tomm"'
Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors
Autor:
J. Schlipf, F. Berkmann, Y. Yamamoto, M. Reichenbach, M. Veleski, Y. Kawaguchi, F. Mörz, J. W. Tomm, D. Weißhaupt, I. A. Fischer
Publikováno v:
Applied Physics Letters. 122:121701
We present a design for silicon-compatible vertical Germanium pin photodiodes structured into all-dielectric metasurfaces. Proof-of-principle metasurfaces are fabricated on silicon-on-insulator wafers in a top-down process. Simulations and measuremen
Publikováno v:
Optics Express. 31:3227
Wide (15-25 nm) InGaN/GaN quantum wells in LED structures were studied by time-resolved photoluminescence (PL) spectroscopy and compared with narrow (2.6 nm) wells in similar LED structures. Using below-barrier pulsed excitation in the microsecond ra
Autor:
J. W. Tomm, B., V. Strelchuk, B., A. Gerhardt, B., U. Zeimer, B., M. Zorn, B., H. Kissel, B., M. Weyers, B., J. Jiménez, B.
Publikováno v:
Journal of Applied Physics; 2/1/2004, Vol. 95 Issue 3, p1122-1126, 5p, 6 Graphs
Autor:
J. W. Tomm, Z. Ya. Zhuchenko, Heiko Kissel, C. Walther, William Ted Masselink, Yu. I. Mazur, G.G. Tarasov
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:255-258
We present new results concerning the carrier transfer between quantum dots (QDs) in dense InAs/GaAs QD arrays with a bimodal size distribution explored by means of steady-state and time-resolved photoluminescence (PL). Interdot carrier transfer invo
Autor:
Yong-Hang Zhang, T. Elsässer, U. Koelle, David J. Smith, Shengrong Chen, P. Dowd, W. Braun, Shane Johnson, C. Z. Guo, J. W. Tomm, C. M. Ryu
Publikováno v:
Journal of Applied Physics. 88:3004-3014
We present a novel semiconductor quantum well (QW) structure consisting of alternating (In,Ga)As and Ga(P,As,Sb) layers grown pseudomorphically on a GaAs substrate by all-solid-source molecular beam epitaxy. The band gap of the QW is determined by th
Publikováno v:
Physical Review B. 59:2731-2736
Publikováno v:
Semiconductor Science and Technology. 14:148-155
We present new results on infrared photoluminescence and photoluminescence excitation spectroscopy in . We find that the phonon coupling significantly influences the optical spectra of this direct narrow-gap semiconductor. In a small spectral region
Autor:
Georgiy G. Tarasov, J. W. Tomm, S. R. Lavoric, Yu. I. Mazur, M. P. Lisitsa, Alexander P. Litvinchuk, A. Rakitin
Publikováno v:
Semiconductor Science and Technology. 14:187-197
We report the results of a comprehensive study of lattice dynamics by means of far-infrared phonon spectroscopy in quaternary semimagnetic narrow-gap single crystals. A new version of the isodisplacement model is developed which takes into account th
Autor:
W. Kraak, Yu. I. Mazur, E. V. Kuz'menko, W. Hoerstel, William Ted Masselink, Georgiy G. Tarasov, J. W. Tomm
Publikováno v:
Physical Review B. 58:4531-4537
Publikováno v:
Journal of Crystal Growth. :1214-1218
Phonon spectra of quaternary Hg 1− x − y Cd x Mn y Te ( x = 0−0.34, y = 0−0.14) single crystals are investigated by means of FIR reflection in the spectral range 30–400 cm −1 and temperature range 5–300 K. It has been concluded that man