Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J. VanOlmen"'
Autor:
Gerald Beyer, Erik Sleeckx, J. VanOlmen, Kristof Croes, C.H. Yu, Marianna Pantouvaki, Chao Zhao, T. I. Bao, H. C. Chen, C.S. Liu, E. VanBesien
Publikováno v:
2008 International Interconnect Technology Conference.
Self aligned CuGeN barriers are used to improve the adhesion of Cu/SiC(N) interfaces at N45 technology. Eight times of electro-migration (EM) lifetime improvement has been demonstrated using thin CuGeN as a capping layer. Less than 5% metal lines Rs
Conference
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Autor:
Gombachika, Belinda Chimphamba1,2 belinda.chimphamba@medisin.uio.no, Fjeld, Heidi1, Chirwa, Ellen2, Sundby, Johanne1, Malata, Address3, Maluwa, Alfred3
Publikováno v:
ISRN Public Health. 2012, p1-13. 13p.
Publikováno v:
IEEE Transactions on Electron Devices; Jan2009, Vol. 56 Issue 1, p43-49, 7p
Publikováno v:
ECS Meeting Abstracts. :1111-1111
Electroplated damascene copper has been used for more than 20 years for interconnects in semiconductor and microelectronic industry1. As the structures continue to scale, the coarse grains formed during annealing become increasingly difficult to exte