Zobrazeno 1 - 10
of 39
pro vyhledávání: '"J. Van Hoeymissen"'
Autor:
Youssef Travaly, Fischer Paul B, Nancy Heylen, M. Baklanov, Els Kesters, J. van Hoeymissen, Guy Vereecke, J. L. Hernandèz, Fabrice Sinapi, Gerald Beyer
Publikováno v:
Microelectronic Engineering. 84:2620-2623
Surface hydrophilisation and effective k-value degradation have been reported in literature after direct-CMP of high porosity SiOC films (without a protective capping layer). In the sequel, attempts to restore ultra low-k (ULK) material initial prope
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:423-428
Within the semiconductor industry, large volumes of hydrogen fluoride (HF) containing wastewaters need to be treated. This paper describes a technique that makes it possible to treat HF wastewater with virtually no waste production. A method based on
Autor:
Guy Vereecke, K. Verstraeten, P. Van Doorne, J. van Hoeymissen, B. Onsia, Sophia Arnauts, M.M. Heyns, K. Kenis, Marc Schaekers
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 56:2321-2330
The validity of a matrix withdrawal method for the analysis of trace metals in silicon nitride films on silicon wafers by total-reflection X-ray fluorescence has been evaluated with samples contaminated with diluted standard solutions of eight metals
Autor:
J. van Hoeymissen, K. Van Nieuwenhuysen, Guy Beaucarne, M. Recamán Payo, I. Kuzma-Filipek, J. Poortmans
Publikováno v:
Thin Solid Films. 518:S80-S82
Epitaxial thin film silicon solar cell technology is one of the most promising midterm alternatives for cost effective industrial solar cell manufacturing. Here, CVD is used to grow the active base layer. However, also the emitter can be grown by CVD
Publikováno v:
Chemical Physics Letters. 226:159-164
The CF(X) radical was generated by 248 nm excimer laser (τ p ≈20 ns) photodissociation of gas-phase CF 2 Br 2 . The production of CF as a function of the photodissociation laser fluence Φ was monitored by laser-induced fluorescence (A 2 Σ + ←X
Publikováno v:
The Journal of Physical Chemistry. 98:3725-3731
Rate coefficients of the elementary reactions of CF(X 2 Π, υ=0) with O, N, and NO 2 at T=294 K and pressures in the range of 2-10 Torr have been determined, using laser photodissociation /laser-induced fluorescence (LPD/LIF) techniques. The CF(X 2
Publikováno v:
The Journal of Physical Chemistry. 96:1257-1263
Rate coefficients of the elementary reactions of CF(X{sup 2}II, v=O) with O{sub 2}, F{sub 2}, Cl{sub 2}, and NO at T = 294 K and p = 2-10 Torr (He or Ar bath gas) have been determined for the first time, using laser photodissociation/laser induced in
Autor:
E. Van Kerschaever, I. Kuzma-Filipek, M. Recamán Payo, J. van Hoeymissen, J. Poortmans, K. Van Nieuwenhuysen
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Epitaxial thin film silicon solar cell technology, consisting of a thin high quality epitaxial layer on top of a highly doped low-cost silicon substrate, is one of the most promising midterm alternatives for cost effective industrial solar cell manuf
Publikováno v:
Journal of Applied Physics. 70:3892-3898
Using a laser‐induced fluorescence technique, SiF2 radicals are detected as primary gas‐phase products of the chemical etching of silicon by fluorine atoms. The bending frequencies for the lower (X 1A1) and the excited (A 1B1) state of the SiF2 m
Publikováno v:
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130).
CMP has become a major process technology. As a result, high volumetric CMP waste streams containing suspended slurry particles and residues, polished from the wafer surface, are generated. This imposes severe demands on the treatment of these efflue