Zobrazeno 1 - 10
of 28
pro vyhledávání: '"J. Tirén"'
Autor:
B. G. Svensson, J. Tirén
Publikováno v:
Journal of The Electrochemical Society. 138:571-576
Implantation of 49 BF 2 + ions onto evaporated amorphous silicon films has been investigated using energies in the range from 20 to 140 keV. The implanted profiles were characterized by secondary ion mass spectrometry (SIMS), and quantitative data fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::159d7a5cf7f1dbb996ce5a6d4a37fa4a
https://doi.org/10.1149/1.2085630
https://doi.org/10.1149/1.2085630
Autor:
B. G. Svensson, Sören Berg, Herman Norde, U Magnusson, B Mohadjeri, J Tirén, Anders Söderbärg, Ö Grelsson
Publikováno v:
Journal of Applied Physics. 67:2148-2152
p‐n junctions formed by vacuum evaporation of silicon on crystalline silicon have been investigated. The junctions were formed by ion implantation of 49BF+2 in the evaporated silicon films. Subsequently, an isochronal heat treatment in the range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::481e42dc4e2e00708fea1701c4539167
https://doi.org/10.1063/1.345550
https://doi.org/10.1063/1.345550
Publikováno v:
Journal of Applied Physics. 67:1266-1271
Deep level transient spectroscopy measurements of electron traps in MeV proton‐ and alpha‐irradiated n‐type silicon have been performed. Six deep levels are found in proton‐irradiated samples, while only three appear after alpha irradiation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082889920b4985eba97fb424869ff7e8
https://doi.org/10.1063/1.345702
https://doi.org/10.1063/1.345702
Akademický článek
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Publikováno v:
Solid-State Electronics. 32:711-716
A simple and fast program for process development of silicon n- and p-channel MESFETs has been developed. The program is used for rapid extraction of electrical and geometrical device parameters. Doping concentration profiles as predicted by SUPREM a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c46d74347cd70ac9396d313a61d1ef
https://doi.org/10.1016/0038-1101(89)90003-8
https://doi.org/10.1016/0038-1101(89)90003-8
Publikováno v:
Sensors and Actuators. 16:67-82
Despite its early discovery, doping-selective etching (DSE) of silicon sensor and actuator structures has not been widely used. The potential advantages of DSE are IC compatibility, new degrees of freedom in three-dimensional micromachining and full
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd93e5a2bf76140261216ebcc3f608ed
https://doi.org/10.1016/0250-6874(89)80006-x
https://doi.org/10.1016/0250-6874(89)80006-x
Publikováno v:
Solid-State Electronics. 32:993-996
To develop a process for making complementary silicon MESFETs it is of utmost importance to achieve high performance MESFETs. Especially the p -channel MESFETs need improvement of driving capability and switching speed. In this article, we will repor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661b61c31ee1d2ca0e3846757445949e
https://doi.org/10.1016/0038-1101(89)90161-5
https://doi.org/10.1016/0038-1101(89)90161-5
Publikováno v:
Sensors and Actuators. 18:389-396
A batch-fabricated non-reverse valve has been manufactured in silicon with micromachining tools, i.e., electrochemical doping-selective etching in KOH and anisotropic etching in EDP. The valve simply consists of a cantilever beam that can take two po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc67a85a1ebb0747e9d0cc459c238967
https://doi.org/10.1016/0250-6874(89)87044-1
https://doi.org/10.1016/0250-6874(89)87044-1
Publikováno v:
Solid-State Electronics. 32:931-934
The subthreshold characteristics of silicon MESFETs manufactured using both bulk silicon and silicon-on-sapphire (SOS) technology, have been studied. n - and p -type devices have been investigated and their characteristics are presented here. The res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::139a2e553b3e4f825108f8ad71941628
https://doi.org/10.1016/0038-1101(89)90153-6
https://doi.org/10.1016/0038-1101(89)90153-6
Publikováno v:
IEEE Electron Device Letters. 9:47-49
Complementary Si MESFETs (CMES) for integrated circuits using silicon-on-sapphire are described. Not only the gate, but also the source and drain of the n-transistors and p-transistors are Schottky junctions, using very high barrier heights for the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37bd344770fd6263dfa5ce42a8c1ac0
https://doi.org/10.1109/55.20409
https://doi.org/10.1109/55.20409