Zobrazeno 1 - 10
of 35
pro vyhledávání: '"J. Thuret"'
Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates
Autor:
J. Thuret, Hacene Lahreche, Timothy J. Anderson, Jenshan Lin, Philippe Bove, J. Kim, Stephen J. Pearton, Brent P. Gila, M. Hlad, Lars F. Voss, Fan Ren
Publikováno v:
Journal of Electronic Materials. 37:384-387
The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-CutTM process is reported. This provides a low-cost, high-ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb97d115df87d8eef66235efd9ed6154
https://doi.org/10.1007/s11664-007-0326-y
https://doi.org/10.1007/s11664-007-0326-y
Publikováno v:
ECS Transactions. 3:271-286
Since the middle of the 90's, many techniques of growing GaN epitaxy have been developed, using either MOCVD or MBE growth methods. Historically, Sapphire and Silicon Carbide have been primarily the substrates used to gorw the GaN Epilayers. The reas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f5574da226c23cbbe05f3b0d65dcaa
https://doi.org/10.1149/1.2357216
https://doi.org/10.1149/1.2357216
Autor:
Brent P. Gila, C. R. Abernathy, Fan Ren, M. Hlad, Hacene Lahreche, Soohwan Jang, J. Thuret, Philippe Bove, Stephen J. Pearton, Hyucksoo Yang, C. J. Pan, Jenn Inn Chyi
Publikováno v:
Journal of Electronic Materials. 35:685-690
Si diffusion into GaN was studied as a function of encapsulant type (SiO2 or SiNx) and diffusion temperature. Using a SiO2 encapsulant, the Si diffusion exhibited an activation energy of 0.57 eV with a prefactor of 2.07×10−4 cm2 sec−1 in the tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f5b25b58d179d8d18988c18c6ecc5c6
https://doi.org/10.1007/s11664-006-0121-1
https://doi.org/10.1007/s11664-006-0121-1
Autor:
J.L. Benchimol, J. Mba, B. Sermage, M. Riet, S. Blayac, P. Berdaguer, A.M. Duchenois, P. André, J. Thuret, C. Gonzalez, A. Konczykowska
Publikováno v:
Journal of Crystal Growth. 209:476-480
InGaAs/InP heterojunction bipolar transistors with a carbon-doped base are shown to have lower gain that those with a Be-doped base. In order to keep advantage of the low diffusivity of the carbon dopant, alternative carbon-doped materials have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::305cd2eab326d8e192bbbaa602e7f456
https://doi.org/10.1016/s0022-0248(99)00601-6
https://doi.org/10.1016/s0022-0248(99)00601-6
Autor:
Lars F. Voss, M. Hlad, Brent P. Gila, J. Thuret, Travis J. Anderson, Fan Ren, Lance Covert, Jenshan Lin, Hacene Lahreche, Philippe Bove, Stephen J. Pearton
Publikováno v:
MRS Proceedings. 955
The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc5319806e1ee243a39888756cda50a5
https://doi.org/10.1557/proc-0955-i16-02
https://doi.org/10.1557/proc-0955-i16-02
Publikováno v:
International Topical Meeting on Microwave Photonics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0aca1eb2e0a5eee8acc7e80d3ec0779
https://doi.org/10.1109/mwp.1997.740288
https://doi.org/10.1109/mwp.1997.740288
Publikováno v:
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
A manufacturable 4W three stage amplifier module for 5GHz wireless LAN applications has been developed using GaAs pulse-doped MESFET technology, a non-hermetic package, clip lead, and printed circuit board (PCB). The first and second stages of the am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb486898c1f032eb132e498723e0e144
https://doi.org/10.1109/mwsym.2004.1338869
https://doi.org/10.1109/mwsym.2004.1338869
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 /spl mu/m. HPT performances were improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8ea0125b519bd34832a55dcaf5b1a7
https://doi.org/10.1109/iciprm.1999.773715
https://doi.org/10.1109/iciprm.1999.773715
Autor:
J.L. Benchimol, J. Mba, A.R. Duchenois, P. Berdaguer, B. Sermage, G. Le Roux, S. Blayac, M. Riet, J. Thuret, C. Gonzalez, P. Andre
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
InGaAs/lnP heterojunction bipolar transistors (HBT) with a carbon doped base are shown to have lower gain than those with Be doped base, partly because of lower electron lifetime. In order to keep advantage of the low diffusivity of carbon dopant, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fca0c7b26668f06ce8898b833de1faec
https://doi.org/10.1109/iciprm.1999.773756
https://doi.org/10.1109/iciprm.1999.773756
Publikováno v:
International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301).
The assessment of an improved InP/InGaAs phototransistor as a front-end photoreceiver for a hybrid fibre radio (HBF) link was realised. The phototransistor performances were investigated as a direct photodetector and as an up-converting mixer. A prel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d401d1f2eedd2160f8004c17cf703b94
https://doi.org/10.1109/mwp.1999.819646
https://doi.org/10.1109/mwp.1999.819646