Zobrazeno 1 - 10
of 223
pro vyhledávání: '"J. Temmyo"'
Publikováno v:
IEEE Journal of Quantum Electronics. 39:1515-1520
By growing the InGaAs active layer at temperatures lower than in conventional growth, we extended the lasing wavelength and presented the high reliability in InGaAs strained-quantum-well laser diodes. Equivalent I-L characteristics were obtained for
Autor:
JM José Maria Ulloa, J. Temmyo, José Luis Sánchez-Rojas, L. Borruel, Jose Manuel G. Tijero, Ignacio Esquivias, I. Izpura
Publikováno v:
Microelectronics Journal. 33:589-593
Spontaneous emission spectra of (111) and (100) InGaAs/GaAs QW lasers with high In content are measured up to high injection levels and compared with the theoretical results of our own model. Piezoelectric effects are investigated in (111) devices, f
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 7:367-372
Near-field optical probing, or nanoprobing, achieves spatial resolution that surpasses the diffraction limit of light and makes possible the luminescence imaging and spectroscopy of single quantum dots in dense arrays of dots. We use optical nanoprob
Autor:
Koichi Kobayashi, Shoichi Sudo, Terutoshi Kanamori, Yasutake Ohishi, J. Temmyo, Yoshiki Nishida, M. Yamada
Publikováno v:
IEEE Journal of Quantum Electronics. 34:1332-1339
This paper describes the development of an efficient praseodymium-doped fluoride fiber amplifier (PDFA) using newly developed PbF/sub 2/-InF/sub 3/-based fluoride single-mode fiber. First, the spectroscopic properties of Pr/sup 3+/ in PbF/sub 2/-InF/
Publikováno v:
Solid-State Electronics. 40:379-382
We have measured the optical properties of self-organized strained InGaAs quantum disks in high magnetic fields. The disks are formed during spontaneous reorganization of a sequence of AlGaAs and strained InGaAs epitaxial films grown on GaAs (311)B s
Publikováno v:
IEEE Journal of Quantum Electronics. 30:471-476
The degradation behavior of 0.98-/spl mu/m strained quantum well (QW) InGaAs/AlGaAs lasers with facet coating films is systematically clarified at high-power operations of more than 100 mW/facet. The degradation is mainly caused by the instability of
28.3 dB gain 1.3 mu m-band Pr-doped fluoride fiber amplifier module pumped by 1.017 mu m InGaAs-LD's
Autor:
J. Temmyo, Terutoshi Kanamori, Shoichi Sudo, Yukio Terunuma, Makoto Yamada, Shimizu Makoto, M. Wada, Yasutake Ohishi
Publikováno v:
IEEE Photonics Technology Letters. 5:654-657
A praseodymium (Pr)-doped fluoride fiber amplifier (PDFA) module that is pumped by strained quantum-well InGaAs laser diodes (LDs) is described. The amplifier module, consisting of a four LD pump configuration and a high NA Pr-doped fluoride fiber wi
Publikováno v:
2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.
We observed the interference spectrum that depends on the carrier-envelope phase using a few-cycle laser pulse. The phenomenon is based on the interference between the second and third harmonics generated from a ZnO thin film.
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Publikováno v:
Electronics Letters. 31:209-211
Continuous-wave (CW) operation of a strained InGaAs quantum disk laser with nanoscale active-structures self-organised on GaAs (311)B substrate is demonstrated at room temperature. The threshold current is ~20 mA, which is considerably lower than tha