Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J. T. Yount"'
Publikováno v:
Journal of Applied Physics. 77:699-705
Electron spin resonance spectroscopy is used to study the effects of thermal NH3 nitridation and subsequent reoxidation on the structure of the dielectric/silicon interface. This is accomplished by study of the Pb center, an interfacial point defect.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f82fe69474817630aaf7c9fab766d0
https://doi.org/10.1063/1.359057
https://doi.org/10.1063/1.359057
Publikováno v:
IEEE Transactions on Nuclear Science. 41:1854-1863
Oxynitrides have been grown by oxidation in N/sub 2/O in a standard thermal oxidation furnace. Two N/sub 2/O processes have been studied: oxidation in N/sub 2/O only, and two-step oxidation with initial oxidation in O/sub 2/ followed by oxidation/nit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8baecdbc24dcd4481f9994755834c0fe
https://doi.org/10.1109/23.340517
https://doi.org/10.1109/23.340517
Autor:
Patrick M. Lenahan, J. T. Yount
Publikováno v:
Journal of Non-Crystalline Solids. :1069-1072
We present evidence supporting the designation of the bridging nitrogen center as the dominant electron trap in NH 3 -nitrided and reoxidized nitrided oxide dielectric films. This defect, an unpaired electron highly localized in a nearly pure 2 p -or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38e626faeb62b06b18a004f4f16bd2d
https://doi.org/10.1016/0022-3093(93)91183-4
https://doi.org/10.1016/0022-3093(93)91183-4
Publikováno v:
Journal of Applied Physics. 74:5867-5870
Electron spin resonance of Pb centers is used to probe the dielectric/silicon interface in NH3‐nitrided oxide (NO) and reoxidized nitrided oxide (RNO) dielectrics. The Pb spectra observed in the NO and RNO systems differ from Si/SiO2 systems only i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2977bdb61af434567cd7563e5abf5105
https://doi.org/10.1063/1.354158
https://doi.org/10.1063/1.354158
Publikováno v:
IEEE Transactions on Nuclear Science. 39:2211-2219
X-ray irradiated oxide, nitrided oxide, and reoxidized nitrided oxide films were studied with electron spin resonance. Nitridation of oxide films reduces the density of radiation-induced E' centers and creates bridging nitrogen center precursors, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::799c0379603fb775a3b52f8a0531ad8e
https://doi.org/10.1109/23.211423
https://doi.org/10.1109/23.211423
Publikováno v:
Journal of Applied Physics. 70:4969-4972
Room‐temperature metastable paramagnetic point defects are created in plasma‐enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86317c242993e76e53f0f3e54d795f05
https://doi.org/10.1063/1.349024
https://doi.org/10.1063/1.349024
Publikováno v:
MRS Proceedings. 338
In this work, an electron spin resonance study of NH3-nitrided, N2O-nitrided, and N2O-grown oxides yields information relating the process history, point defect structure, and electrical behavior. NH3-nitridation is responsible for the introduction o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24881d861554036519d991be3475a77d
https://doi.org/10.1557/proc-338-31
https://doi.org/10.1557/proc-338-31