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Autor:
J. T. Yoskowitz, G. A. Krafft, G. Palacios-Serrano, S. A. K. Wijethunga, J. Grames, J. Hansknecht, C. Hernandez-Garcia, M. Poelker, M. L. Stutzman, R. Suleiman, C. A. Valerio-Lizarraga, S. B. Van Der Geer
Publikováno v:
Physical Review Accelerators and Beams, Vol 27, Iss 12, p 123401 (2024)
GaAs photocathodes in dc high-voltage photoguns are highly susceptible to ion back-bombardment, which reduces the photocathode quantum efficiency and limits the useful operating lifetime for producing polarized electron beams. This paper demonstrates
Externí odkaz:
https://doaj.org/article/db9db36c61c542ee8717a7be0b4c8086
