Zobrazeno 1 - 4
of 4
pro vyhledávání: '"J. T. Wolan"'
Autor:
J. T. Wolan, A. H. Kababji
Publikováno v:
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b36e7075143f89985d16a46bd0a1852
https://doi.org/10.1002/9780470751817.ch11
https://doi.org/10.1002/9780470751817.ch11
Publikováno v:
MRS Proceedings. 622
In this study, the near-surface regions of air-exposed thin GaN layers deposited by hydride vapour phase (HVPE) epitaxy on 6H-SiC substrates have been examined. Chemical-state identification and in-depth elemental distribution profiles are evaluated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f78e02b39f40fc1711008e6c3d6418
https://doi.org/10.1557/proc-622-t5.7.1
https://doi.org/10.1557/proc-622-t5.7.1
Publikováno v:
MRS Proceedings. 640
In this study, the near-surface region of air-exposed thin 3C-SiC films grown on 50-mm (2-in.) diameter Si(111) and Si(211) substrates have been investigated. Carbonization to create the film in a radio-frequency (RF) induction-heated horizontal atmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea9cb9f5c1f071b35c0243b90be4220
https://doi.org/10.1557/proc-640-h5.43
https://doi.org/10.1557/proc-640-h5.43