Zobrazeno 1 - 10
of 36
pro vyhledávání: '"J. T. Wetzel"'
Publikováno v:
Journal of Electronic Materials. 30:284-289
The International Technology Roadmap for Semiconductors predicts that continued scaling of devices will require ultra-low-k materials with k values less than 2.5 for the 100 nm technology node and beyond. Incorporation of porosity into dense dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63379a1a0983c15aa5214e612e57daec
https://doi.org/10.1007/s11664-001-0032-0
https://doi.org/10.1007/s11664-001-0032-0
Autor:
D. Kumar, J. T. Wetzel, C. Ryu, Paul H. Townsend, T. Tanabe, Melvin P. Zussman, Alvin Leng Sun Loke, Raymond Nicholas Vrtis, S. Simon Wong
Publikováno v:
IEEE Transactions on Electron Devices. 46:2178-2187
This paper addresses the drift of copper ions (Cu/sup +/) in various low-permittivity (low-/spl kappa/) polymer dielectrics to identify copper barrier requirements for reliable interconnect integration in future ULSI. Stressing at temperatures of 150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80d3979ebf61b34b6b68718f5caa0eb
https://doi.org/10.1109/16.796294
https://doi.org/10.1109/16.796294
Autor:
Changhwan Shin, Xin Sun, Tiehui Liu, Qiang Lu, G. Gebara, Victor Moroz, Hideki Takeuchi, Shuji Ikeda, J. T. Wetzel
Publikováno v:
IEEE Electron Device Letters. 29:491-493
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6aaa384c1f76aaade3aef0eaae7cf56
https://doi.org/10.1109/led.2008.919795
https://doi.org/10.1109/led.2008.919795
Autor:
Hisao Kawasaki, C. Capasso, J. T. Wetzel, D. Jawarani, Martin Gall, Ennis T. Ogawa, Patrick R. Justison, Paul S. Ho
Publikováno v:
Applied Physics Letters. 79:4414-4416
The impact of low-k dielectrics on the reliability of advanced Cu interconnects is of growing importance. As a first step to understanding this impact, we have investigated the effect of two types of polymeric low-k materials on the electromigration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5ff1871d88089b840b1d967e50d50cd
https://doi.org/10.1063/1.1421426
https://doi.org/10.1063/1.1421426
Publikováno v:
Journal of Applied Physics. 69:2048-2056
The structures of [001] tilt boundaries in silicon have been systematically investigated by computer modeling, using the harmonic Keating potential to describe the interatomic forces. The full angular range of symmetrical tilt boundaries can be descr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bde350eb062610e83b889c3744cf3aa
https://doi.org/10.1063/1.348730
https://doi.org/10.1063/1.348730
Publikováno v:
IEEE Electron Device Letters. 19:177-179
The effect of low-K polymer passivation on electrical leakage was investigated to evaluate the reliability of polymer integration on device wafers. Polyimide passivation over Al(0.5% Cu) interconnects inlaid in TEOS increases the intralevel leakage c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39a56fdb29eb549ac8d7be36611d04a1
https://doi.org/10.1109/55.678535
https://doi.org/10.1109/55.678535
Publikováno v:
Springer Series in Advanced Microelectronics ISBN: 9783642632211
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1fb3cb5b721f1ca8bbbcabc2ff651e7
https://doi.org/10.1007/978-3-642-55908-2_3
https://doi.org/10.1007/978-3-642-55908-2_3
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
This paper reports the drift of Cu ions in various low-permittivity polymer dielectrics to identify Cu barrier requirements for future ULSI integration. Bias-temperature stressing was conducted on Cu-insulator-semiconductor capacitors to investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1d6577cd4c13101794d0394e2dcb25
https://doi.org/10.1109/vlsit.1998.689185
https://doi.org/10.1109/vlsit.1998.689185
Autor:
B. Ahlbum, M.-H. Tsai, J. Lee, S. Lin, W. Mlynko, C. Jin, R.J. Fox, E. Mickler, J. T. Wetzel, P.M. Winebarger, K.A. Monnig
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Technological challenges for selection and integration of ultra-low dielectric constant insulators are discussed. Correlations of material properties with their performance in 1 level-metal inlaid copper integration are established. Dielectric consta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f117d91e9c7e33d9c3c0e9a255a4db5f
https://doi.org/10.1109/iedm.2001.979406
https://doi.org/10.1109/iedm.2001.979406
Autor:
C. Capasso, Paul S. Ho, D. Jawarani, Hisao Kawasaki, Patrick R. Justison, J. T. Wetzel, Ennis T. Ogawa, Martin Gall
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
Electromigration (EM) characteristics were evaluated on multi-level Al(Cu) test structures with polymeric low k and standard oxide interlevel dielectrics. The two polymers used as interlevel dielectrics in this work are a fluorinated polyimide (FPI)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c01a07351f891578f3d6d529ed184336
https://doi.org/10.1109/iitc.2000.854325
https://doi.org/10.1109/iitc.2000.854325