Zobrazeno 1 - 10
of 338
pro vyhledávání: '"J. T. Olesberg"'
Publikováno v:
Applied Physics Letters. 117:061101
Two new superlattices with high internal quantum efficiency at high injection, InAs/AlGaInSb and InAs/GaInSb/InAs/AlAsSb, are presented and compared with state-of-the-art InAs/GaSb and InAs/InAsSb superlattices. The internal quantum efficiency peaks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::589e1c406eb6e0dc5759d1e35b1a1891
https://doi.org/10.1063/5.0013854
https://doi.org/10.1063/5.0013854
Publikováno v:
Journal of Applied Physics. 126:243101
The internal quantum efficiency of a series of InAs/GaSb superlattices was investigated as a function of carrier generation rate through variable excitation, quasicontinuous-wave photoluminescence measurements. GaSb thicknesses were varied to maximiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38ddac1be9928b1dc53b0287be6ba70d
https://doi.org/10.1063/1.5129163
https://doi.org/10.1063/1.5129163
Autor:
J. T. Olesberg, Joel M. Fastenau, Edwin J. Koerperick, Dmitri Lubyshev, Dennis Norton, Amy W. K. Liu, Yueming Qiu
Publikováno v:
Infrared Physics & Technology. 59:158-162
Antimony-based materials continue to provide great interest for infrared photodetector and focal plane array imaging applications. Detector architectures include InAs/Ga(In)Sb strained-layer superlattices, which create a type-II band alignment that c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced67abb58588d78e1b6c39e089462bc
https://doi.org/10.1016/j.infrared.2012.12.033
https://doi.org/10.1016/j.infrared.2012.12.033
Publikováno v:
Semiconductor Science and Technology. 21:267-272
This paper describes molecular beam epitaxial growth, processing and room temperature characterization of lattice-matched GaInAsSb mid-infrared detectors on GaSb substrates for room temperature operation. For the first time, we demonstrate GaInAsSb d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eccf1a7cd44554089bd4d50ecc202a9
https://doi.org/10.1088/0268-1242/21/3/009
https://doi.org/10.1088/0268-1242/21/3/009
Publikováno v:
Journal of Applied Physics. 87:7164-7168
We report calculations of the linewidth enhancement factor for five midinfrared active region materials. The linewidth enhancement factors for two type-I quantum wells based on InAsSb are 2.5 and 5.4, which represent a reduction of up to a factor of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29179585daf49aa29c7d031ddd522b8e
https://doi.org/10.1063/1.372964
https://doi.org/10.1063/1.372964
Autor:
J. T. Olesberg, Amy W. K. Liu, Yueming Qiu, Dmitri Lubyshev, Joel M. Fastenau, Dennis Norton, Edwin J. Koerperick
Publikováno v:
Quantum Sensing and Nanophotonic Devices IX.
Antimony-based photodetector materials have attracted considerable interest for their potential and demonstrated performance in infrared detection and imaging applications. Mid-wavelength infrared detector has been demonstrated using bulk InAsSb/AlAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::868da81bc91fdbad91b17520a0c1657a
https://doi.org/10.1117/12.909571
https://doi.org/10.1117/12.909571
Autor:
T. F. Boggess, Fouad Kiamilev, L. M. Murray, J. T. Olesberg, Edwin J. Koerperick, Naresh C. Das, John P. Prineas
Publikováno v:
Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XIII.
We designed and fabricated 64x64 supper lattice light emitting diode (SLED) array with peak emission wavelength of 3.8 micron. The light emission is observed from the bottom side of the device through the substrate. The CMOS driver circuit is fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45558565892337a1e232938a13ca70e3
https://doi.org/10.1117/12.782652
https://doi.org/10.1117/12.782652
Autor:
T. C. Hasenberg, J. T. Olesberg, S. W. McCahon, Michael E. Flatté, S. A. Anson, David H. Chow, Thomas F. Boggess
Publikováno v:
Applied Physics Letters. 72:229-231
A broadly tunable, ultrafast optical parametric oscillator is used to measure carrier-density-dependent absorption spectra in a 340-meV band gap (GaInSb/InAs)/AlGaSb superlattice multiple quantum well structure. Similar structures have been implement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3d0242014fb474183e75257dc87e21
https://doi.org/10.1063/1.120694
https://doi.org/10.1063/1.120694
Autor:
John P. Prineas, Linda J. Olafsen, J. R. Yager, T. F. Boggess, J. T. Olesberg, M. H. M. Reddy, J. L. Hicks, C. Cao, S. Seydmohamadi, Chris Coretsopoulos, Michael R. Santilli
Publikováno v:
SPIE Proceedings.
The performances of a pin versus a pn structure from GaInAsSb materials operating at room temperature are compared both from a theoretical point of view and experimentally. Theoretically, it is found in materials limited by generation-recombination c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba76831c709fec2e7d970ec02e1798b
https://doi.org/10.1117/12.647109
https://doi.org/10.1117/12.647109
Publikováno v:
Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference.
Summary form only given. We describe time-resolved transient grating measurements of in-plane ambipolar transport in a narrowband-gap superlattice that has a period comprised of four layers: InAs/GaInSb/InAs/AlGaInAsSb. The structure was designed as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::511fd37833e1bbbf342dc466e5497bd8
https://doi.org/10.1109/qels.1999.807543
https://doi.org/10.1109/qels.1999.807543