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Publikováno v:
Microelectronics Reliability. 52:2744-2748
Effects of the electrical flame off (EFO) and ultrasound (US) parameters on the work hardening behavior of Pd coated Cu (PCC) free air ball (FAB) are presented and compared to those of bare Cu reported in the literature. The FABs are characterized us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5719332dafc67699c2f39bbfebf5cd4
https://doi.org/10.1016/j.microrel.2012.03.030
https://doi.org/10.1016/j.microrel.2012.03.030
Publikováno v:
Microelectronics Reliability. 51:30-37
The effect of substrate material pick up by the Cu wire tail on the hardness of the subsequently formed free air ball (FAB) is investigated with scanning electron microscopy (SEM) and micro-hardness test. The Cu wire bonds are made on Au metallizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faa06cfcee52a318d1b2ad587dabeea5
https://doi.org/10.1016/j.microrel.2010.03.014
https://doi.org/10.1016/j.microrel.2010.03.014
Publikováno v:
Microelectronics Reliability. 51:38-42
Cu ball bonding processes are significantly less robust than Au ball bonding processes. One reason for this are higher variations observed, e.g. in the free-air ball (FAB) formation process. There is a strong influence the tail bond process has on su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5593acecaca4ea77e74caa38e2a3e1a2
https://doi.org/10.1016/j.microrel.2010.06.007
https://doi.org/10.1016/j.microrel.2010.06.007
Autor:
Chunjin Hang, John Persic, Wan Ho Song, Michael Mayer, J. T. Moon, Y. Zhou, Chunqing Wang, I. Lum
Publikováno v:
Microelectronic Engineering. 86:2094-2103
Cu bonding wire is more and more used for interconnections to integrated circuits (ICs) to reduce cost and increase performance compared to Au wire. To eliminate underpad damage for Cu wire applications, it is worthwhile to reduce the hardness of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2d87909fbdce200020a219c3a765e2
https://doi.org/10.1016/j.mee.2009.01.085
https://doi.org/10.1016/j.mee.2009.01.085
Autor:
D. C. KIM, S. SEO, D.-S. SUH, R. JUNG, C. W. LEE, J. K. SHIN, I. K. YOO, I. G. BAEK, H. J. KIM, E. K. YIM, S. O. PARK, H. S. KIM, U-IN CHUNG, J. T. MOON, B. I. RYU, J.-S. KIM, B. H. PARK
Publikováno v:
Integrated Ferroelectrics. 93:90-97
Experimental investigations on the resistive memory switching in sub-micron sized NiO memory cell are presented to elucidate the resistive memory switching mechanism. The voltage or current-biased I-V measurements show that the resistive switching tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c0ec52bbd58a1472a30acb26f17d36
https://doi.org/10.1080/10584580701756169
https://doi.org/10.1080/10584580701756169
Publikováno v:
Metallurgical and Materials Transactions A. 37:3085-3097
Copper bonding wires were characterized using electron backscatter diffraction (EBSD). During drawing, shear components are mainly located under the surface and 〈111〉 and 〈100〉 fiber texture components develop with similar volume fractions. G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8cd41fb1a980f95f0f94374afca634
https://doi.org/10.1007/s11661-006-0189-5
https://doi.org/10.1007/s11661-006-0189-5
Autor:
J. Lee, J. S. Cho, Young-Woon Kim, Anthony D. Rollett, J. T. Moon, Y. W. Cho, Kyu Hwan Oh, Jae-Hyung Cho
Publikováno v:
Metallurgical and Materials Transactions A. 34:1113-1125
Recrystallization and grain growth of gold bonding wire have been investigated with electron back-scatter diffraction (EBSD). The bonding wires were wire-drawn to an equivalent strain greater than 11.4 with final diameter between 25 and 30 µm. Annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80560f2ddd8a9e6210c2c0bad48e8362
https://doi.org/10.1007/s11661-003-0131-z
https://doi.org/10.1007/s11661-003-0131-z
Publikováno v:
Journal of Electronic Packaging. 137
In situ sensors can measure wire bond reliability nondestructively during thermal aging. Conventional thermal aging of ball bonds requires ovens heating the entire microchip along with the wire bonds, also affecting interconnects for in situ sensors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5ee2afccb5f5d6bbc5ec77a44b42981
https://doi.org/10.1115/1.4028281
https://doi.org/10.1115/1.4028281
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1835-1839
As the packing density increases in the fabrication of semiconductor chips, the aspect ratio and the critical dimension (CD) of a metal contact are exponentially aggravated in dry etch processing. The aspect ratio dependency of plasma-induced chargin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc8237a2fde98163c1bc93d27a906f5e
https://doi.org/10.1116/1.1369786
https://doi.org/10.1116/1.1369786