Zobrazeno 1 - 10
of 33
pro vyhledávání: '"J. Stupakova"'
Autor:
Algirdas Sužiedėlis, Jonas Gradauskas, N. Samuolienė, Steponas Ašmontas, J. Stupakova, Andrius Maneikis
Publikováno v:
Applied Physics A. 124
We present the study of voltage signal rise across both additionally doped and undoped porous silicon diode sensors exposed to microwave radiation. The doped ones exhibit fast, of the nanosecond order, response times, but lower voltage–power respon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65815759a02f33cabee61c7521e061a9
https://doi.org/10.1007/s00339-018-1785-0
https://doi.org/10.1007/s00339-018-1785-0
Autor:
Paulius Miškinis, J. Stupakova, A. Jukna, Andrius Maneikis, Kristina Sliuziene, Roman Sobolewski, Jonas Gradauskas, Vaida Vasiliauskiene, Algirdas Suziedelis
Publikováno v:
NEMS
We present our studies of electric properties of micro-diodes based on asymmetrically narrowed, partially oxygen-depleted, semiconducting YBa 2 Cu 3 O 7−x thin-film mesas. A level of asymmetry of nonlinear current-voltage characteristics of our dio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f38b7e0685e4ec149479c3b1575e7812
https://doi.org/10.1109/nems.2017.8016995
https://doi.org/10.1109/nems.2017.8016995
Publikováno v:
Technical Physics Letters. 41:1202-1204
We have studied the rise of electromotive force (emf) across ohmic and nonohmic metal–porous silicon contacts under the action of 10-GHz microwave radiation. It is established that emfs of opposite polarities with different growth (and decay) rates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4763632d079805a6aa982ccde5b4d58c
https://doi.org/10.1134/s1063785015120202
https://doi.org/10.1134/s1063785015120202
Publikováno v:
Acta Physica Polonica A. 122:1121-1124
This work presents porous silicon technology, adapted to improve the characteristics of monocrystalline silicon solar cell. This is achieved by taking advantage of properties provided by porous silicon technology in production of diverse structures i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a60a18ca6b8ca340a0483153b8c8dbb9
https://doi.org/10.12693/aphyspola.122.1121
https://doi.org/10.12693/aphyspola.122.1121
Publikováno v:
Lithuanian Journal of Physics. 51:143-146
Attempts to use microporous silicon structures in detection of microwave radiation were investigated. Point-contact-like samples containing microporous silicon layers were manufactured using traditional technique of electrochemical etching of p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ed0c9da762e38ee7c99c738d14874de
https://doi.org/10.3952/lithjphys.51202
https://doi.org/10.3952/lithjphys.51202
Publikováno v:
Acta Physica Polonica A. 113:993-996
Diode-like samples, containing porous silicon structures, were investigated by microwave radiation pulses. The resistance of the samples and electromotive force arising over the samples placed in a section of waveguide was measured. Reduction of resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80b78e0a8b06d633ce310453c0ae1d38
https://doi.org/10.12693/aphyspola.113.993
https://doi.org/10.12693/aphyspola.113.993
Publikováno v:
Lithuanian Journal of Physics. 47:169-173
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91af44bf22f323178bdf9e9d9e9ea489
https://doi.org/10.3952/lithjphys.47211
https://doi.org/10.3952/lithjphys.47211
Publikováno v:
Medžiagotyra, Vol 18, Iss 3, Pp 220-222 (2012)
Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50552627f7f581ac0d55dbb61fc1ad2b
http://matsc.ktu.lt/index.php/MatSc/article/view/2428
http://matsc.ktu.lt/index.php/MatSc/article/view/2428
Autor:
V. Zagadskij, J. Stupakova, Edmundas Širmulis, Jonas Gradauskas, N. Samuolienė, E. Šatkovskis
Publikováno v:
Acta Physica Polonica A. 119:137-139
Photoresponse of silicon samples containing porous structures have been studied under the action of CO2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9299b5b1c037f85cbaa03b46ed264f9
https://doi.org/10.12693/aphyspola.119.137
https://doi.org/10.12693/aphyspola.119.137
Autor:
Renata Boris, Valentin Antonovič, J. Stupakova, J. Keriene, V. Zagadskij, R. Mitkevičius, E. Shatkovskis, A. Baradinskaite, A. Jukna
Publikováno v:
SPIE Proceedings.
The electrochemical etching of porous silicon offers many diverse opportunities for production of complex porous silicon structures located not only on the surface but also in a bulk of the silicon devices. A specific technological regime, the photo-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bac4f8d3c8b560351f78a44305fac65
https://doi.org/10.1117/12.2083927
https://doi.org/10.1117/12.2083927