Zobrazeno 1 - 10
of 79
pro vyhledávání: '"J. Storasta"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 338:95-100
Two sets of p- and n-conductivity type silicon samples have been irradiated by 6.6 MeV electrons with fluence from 1 to 5 (×10 16 ) e/cm 2 . Hall and magnetoresistivity measurement techniques were used to determine irradiation induced changes. The p
Publikováno v:
Lithuanian Journal of Physics. 54:94-98
A set of n-type silicon samples has been irradiated by 6.6 MeV electrons with doses from 1 to 5 (× 10 16 ) e/cm 2 , and temperature dependences of Hall and magnetoresistance mobilities were measured. The ratio of magnetoresistance and Hall mobilitie
Autor:
Paulius Malinovskis, Remigijus Vasiliauskas, A. Mekys, Mikael Syväjärvi, J. Storasta, Rositza Yakimova
Publikováno v:
Materials Science Forum. :335-338
The 3C-SiC layers on nominally on-axis 6H-SiC substrates were grown using sublimation epitaxy. More than 90% coverage by 3C-SiC is typically achieved at growth temperature of 1775°C. The main reason for the polytype inclusions to appear is local sup
Publikováno v:
Lithuanian Journal of Physics. 56
The electrical properties of the neutron irradiated Si were analysed by means of the Hall effect and magnetoresistance temperature dependence. It was demonstrated that the electron mobility decreased with increasing the neutron fluence in a wide flue
Autor:
R. Tomašiūnas, T. Grinys, A. Mekys, J. Storasta, Tadas Malinauskas, A. Kadys, Paulius Malinovskis, V. Bikbajevas
Publikováno v:
physica status solidi c. 9:689-692
Temperature dependent Hall effect, magnetoresistivity and time resolved photoconductivity studies have been performed on GaN epilayers and GaN/InGaN multiple quantum wells (MQWs) grown on sapphire films by Metal Organic Chemical Vapor Deposition (MOC
Publikováno v:
Materials Science Forum. :157-160
The electrical and optical techniques have been applied for investigation of carrier transport and recombination features in thick free-standing 3C-SiC layers. Temperature dependencies of Hall mobility, magneto-resistivity, and conductivity indicated
Autor:
Vaidotas Kažukauskas, Neimantas Vainorius, Giedrius Mockevicius, J. Storasta, Juozas Vaitkus, Paulius Malinovskis, A. Mekys, Ernestas Žąsinas, Rokas Bondzinskas
Publikováno v:
Lithuanian Journal of Physics. 51:345-350
Deep level spectroscopy in neutron irradiated FZ and MCz Si was performed by extrinsic photoconductivity spectra measurements in the range of temperature of 18–120 K. The Lukovsky model was used, and the Gaussian distribution of deep level energy d
Publikováno v:
Acta Physica Polonica A. 114:903-912
Publikováno v:
Acta Physica Polonica A. 114:779-790
We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated b
Autor:
Vaidotas Kažukauskas, Vidmantas Kalendra, A. Mekys, J. Storasta, Valdas Sablinskas, Algirdas Paskasis Smilga, Rūta Barisevičiūtė, Justinas Ceponkus
Publikováno v:
Materials Science in Semiconductor Processing. 11:63-69
Fullerenes C 60 were introduced into the GaAs crystal through the dislocation network by means of thermal diffusion. Energy level at 0.34–0.42 eV above the valence band was identified, which could be related to C 60 . Interaction between C 60 vibra