Zobrazeno 1 - 10
of 20
pro vyhledávání: '"J. Stoimenos"'
Publikováno v:
Resolution and Discovery. 1:21-26
Silicon nanorods were produced by the vapor—liquid—solid process and by wet chemical etching as possible candidates for solar cells. The nanostructures of Si nanorods formed by the two different processes are investigated and compared by transmis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::babec4187984f3d20db75a357738eef1
https://doi.org/10.1556/2051.2016.00035
https://doi.org/10.1556/2051.2016.00035
Publikováno v:
Superlattices and Microstructures. 42:158-164
Layer by layer growth of ZnO epilayers on (0001) Al2O3 substrates is achieved by radical-source molecular beam epitaxy. A thin MgO buffer, followed by a low-temperature ZnO buffer was used in order to accommodate the lattice mismatch between ZnO and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67865efd2bb908126159b8ca0099ad99
https://doi.org/10.1016/j.spmi.2007.04.064
https://doi.org/10.1016/j.spmi.2007.04.064
Autor:
M. Kreye, A. Che Mofor, Andreas Waag, A. El Shaer, Alois Krost, J. Stoimenos, Andrey Bakin, Béla Pécz, Jürgen Bläsing
Publikováno v:
Applied Physics A. 88:57-60
We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H2O2-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81217c1ae3549094e35968ed8dc9d90
https://doi.org/10.1007/s00339-007-3959-z
https://doi.org/10.1007/s00339-007-3959-z
Autor:
M. Kreye, A. C. Mofor, Michael Heuken, J. Stoimenos, Jürgen Bläsing, Béla Pécz, Alois Krost, Andrey Bakin, Abdelhamid El-Shaer, Andreas Waag
Publikováno v:
physica status solidi (b). 243:768-772
Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d0cbfced7a52589bb0b8371394ba40b
https://doi.org/10.1002/pssb.200564655
https://doi.org/10.1002/pssb.200564655
Autor:
Andrey Bakin, M. Kreye, A. Che Mofor, Juergen Christen, Abdelhamid El-Shaer, J. Stoimenos, Frank Bertram, Andreas Waag, Michael Heuken
Publikováno v:
Journal of Crystal Growth. 287:7-11
The growth of ZnO epitaxial layers by using molecular beam epitaxy (MBE) is presented in this paper. We employed a modified Varian Gen II MBE system using H2O2 as an oxidant. ZnO layers with thickness from 100 to 600 nm were grown on (0 0 0 1)-sapphi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655f1fb8b85b0b0efad30ffe2486ceb3
https://doi.org/10.1016/j.jcrysgro.2005.10.033
https://doi.org/10.1016/j.jcrysgro.2005.10.033
Autor:
George J. Papaioannou, J. Stoimenos, Dimitris Tsoukalas, Panagiotis Dimitrakis, S. Hatzandroulis
Publikováno v:
Solid-State Electronics. 42:201-204
Metal–insulator–semiconductor–insulator–semiconductor (MISIS) capacitors, fabricated using direct wafer bonding, have been used for the evaluation of the electrical properties of a silicon film (4.1 μm), a buried oxide (42 nm) and its interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb20d3c578bf937125ef57a22d21cda7
https://doi.org/10.1016/s0038-1101(97)00227-x
https://doi.org/10.1016/s0038-1101(97)00227-x
Autor:
R. Adhiri, K. Moschovis, A. Rinta-Möykky, Petteri Uusimaa, A. Souifi, Arto Salokatve, J. Stoimenos, George Kiriakidis, Markus Pessa, Pekka Savolainen
Publikováno v:
Physics and Simulation of Optoelectronic Devices VI.
ZnSe-based laser diodes have recently encountered strong competition from those grown from GaN related materials. These two material systems behave in a very different way as far as defect generation and propagation are concerned. For ZnSe-based mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297694b554eb73eb25c4034011e6b5bb
https://doi.org/10.1117/12.316674
https://doi.org/10.1117/12.316674
Autor:
Andreas Waag, Andrey Bakin, J. Stoimenos, Wladimir Schoch, Uwe Siegner, Martin Albrecht, S. V. Sorokin, Stefan Ivanov, A. Che Mofor, Vitaliy Avrutin, Abdelhamid El-Shaer, Sibylle Sievers, Natalia Izyumskaya, H. Ahlers
Publikováno v:
Applied Physics Letters. 87:062501
The need for diluted magnetic semiconductors has stimulated research on Mn-doped ZnO. However, the type of magnetic coupling (ferro/para) in ZnMnO remains an issue of debate. We have investigated the magnetic properties of Mn-doped ZnO layers grown b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df61133a935d2a759c3c5534b5b57b44
https://doi.org/10.1063/1.2007864
https://doi.org/10.1063/1.2007864
Publikováno v:
physica status solidi (b). 20:623-628
The optical absorption of cuprous oxide is affected by the defect structure and this is most pronounced in the middle of the stability range, indicating that the observed absorption bands are due to aggregates of vacancies. A simultaneous measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0600e15b9e0b35b052afc0d905428387
https://doi.org/10.1002/pssb.19670200224
https://doi.org/10.1002/pssb.19670200224
Publikováno v:
Physica Status Solidi (a). 13:K87-K89
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c64168aec63fcb1f2b048de8d3ec2980
https://doi.org/10.1002/pssa.2210130157
https://doi.org/10.1002/pssa.2210130157