Zobrazeno 1 - 10
of 437
pro vyhledávání: '"J. Stoemenos"'
Publikováno v:
Nanomaterials, Vol 11, Iss 1878, p 1878 (2021)
Nanomaterials
Volume 11
Issue 8
Nanomaterials
Volume 11
Issue 8
Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 °C, intentionally below the threshold for Solid State Crystallization, which is 420 °C. These whiskers have significant common characteristics with whiskers g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fea019510e33b7f912c2768a50f83f3
https://www.mdpi.com/2079-4991/11/8/1878
https://www.mdpi.com/2079-4991/11/8/1878
It is demonstrated that a discrete buried layer of β SiC, with an epitaxial relationship to the silicon substrate, can be fabricated in 100 single crystal silicon using Ion Beam Synthesis (IBS) and high temperature annealing. This layer is formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ffd862312a2a57be7ed1f68b6d0b0a9
https://doi.org/10.1201/9781003069621-68
https://doi.org/10.1201/9781003069621-68
Autor:
Nikolaos Vouroutzis, Mario Barozzi, B. Colombeau, Giancarlo Pepponi, Vassilios Ioannou-Sougleridis, Dimitrios Skarlatos, J. Stoemenos, Nikolas Zographos, D. Velessiotis
Publikováno v:
ECS Transactions. 86:51-58
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5ff5478d2806e39971018e532c6cb58
https://doi.org/10.1149/08610.0051ecst
https://doi.org/10.1149/08610.0051ecst
Autor:
Nikolaos Vouroutzis, György Radnóczi, Nikolaos Frangis, Béla Pécz, Daniel Knez, Ferdinand Hofer, J. Stoemenos
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
The growth of the poly-Si films was studied by Transmission Electron Microscopy (TEM) after Ni Metal Induced Lateral Crystallization (Ni-MILC) of amorphous Si films at 413 °C. Significant differences in the morphology and the mode of growth of the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52d41209913e68c93b6e83f5bfcacb89
https://doi.org/10.1038/s41598-019-39503-9
https://doi.org/10.1038/s41598-019-39503-9
Autor:
Dimitrios Skarlatos, Vassilios Ioannou-Sougleridis, M. C. Skoulikidou, J. Stoemenos, Nikolaos Vouroutzis, D. Velessiotis
Publikováno v:
Materials Science in Semiconductor Processing. 122:105477
In this work, the surface damage induced in ion-implanted (100) Ge after extended (20 ms) flash lamp annealing (FLA) at 800–850 °C is investigated and discussed using combined results from scanning electron microscopy, transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b502a9347778aa4e4306e3befbadbda6
https://doi.org/10.1016/j.mssp.2020.105477
https://doi.org/10.1016/j.mssp.2020.105477
Autor:
Béla Pécz, E. Dodony, György Radnóczi, Nikolaos Vouroutzis, Gábor Battistig, Nikolaos Frangis, J. Stoemenos
Publikováno v:
Materials Today: Proceedings. 3:825-831
Nickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b392ca332306c62f6c06b5fa16efc3b
https://doi.org/10.1016/j.matpr.2016.02.015
https://doi.org/10.1016/j.matpr.2016.02.015
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:1364-1367
3C-SiC nanocrystallites were epitaxially formed on a single crystalline Si surface covered by a 150 nm thick SiO 2 capping layer after low dose carbon implantation and subsequent high temperature annealing in CO atmosphere. Carbon implantation is use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b418f801880721462c618cd5bbcef582
https://doi.org/10.1016/j.nimb.2009.01.141
https://doi.org/10.1016/j.nimb.2009.01.141
Autor:
José Millan, Phillippe Godignon, E. Rossinyol, Philippe Vennéguès, Josep Montserrat, Michael R. Jennings, Amador Pérez-Tomás, Philip Mawby, J. Stoemenos
Publikováno v:
Surface and Interface Analysis. 40:1164-1167
Many refractory metal silicides have received great attention due to their potential for innovative developments in the silicon-based microelectronic industry. However, tantalum silicide, Ta2Si, has remained practically unnoticed since its successful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54c12c57ce2b32d5c38a9441ed77cc69
https://doi.org/10.1002/sia.2859
https://doi.org/10.1002/sia.2859
Autor:
Andreas Waag, A. C. Mofor, Joseph Kioseoglou, Andrey Bakin, Béla Pécz, Abdelhamid El-Shaer, J. Stoemenos
Publikováno v:
Journal of Crystal Growth. 308:314-320
The quality of the ZnO films, epitaxially grown on sapphire, can be substantially improved when a MgO buffer layer is used. The role and the structural characteristics of this buffer layer were studied by transmission electron microscopy. It was foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f931636b403e3a8c2928448747eb6b
https://doi.org/10.1016/j.jcrysgro.2007.08.012
https://doi.org/10.1016/j.jcrysgro.2007.08.012
Autor:
J. Stoemenos, S. Christoulakis, Theofanis N. Kitsopoulos, Péter Horváth, Mirela Petruta Suchea, George Kiriakidis
Publikováno v:
Thin Solid Films. 515:8577-8581
In this work we present recent results on ZnO thin films grown by dc magnetron sputtering technique at room temperature (RT), focusing on structural and surface characterization using conventional cross-section transmission electron microscopy (XTEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f2cf3bc8e0588a218ef7405501a4425
https://doi.org/10.1016/j.tsf.2007.03.111
https://doi.org/10.1016/j.tsf.2007.03.111