Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J. Splettstober"'
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57728ec380f036186d0e48321a971404
https://doi.org/10.1109/csics.2014.6978556
https://doi.org/10.1109/csics.2014.6978556
Autor:
J. Wenger, J. Splettstober
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
The "wireless revolution" has created a number of new opportunities not only at lower microwave communication frequencies at 0.9 GHz and 1.8 GHz, but also at millimeterwave frequencies. The 38/spl plusmn/2 GHz frequency range has emerged as an intern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c65dbe13cce48457adc02fc23d8c11de
https://doi.org/10.1109/mwsym.1996.510980
https://doi.org/10.1109/mwsym.1996.510980
Publikováno v:
25th European Microwave Conference, 1995.
Design, fabrication, and test results of a Ka-band monolithic MESFET VCO with integrated buffer amplifier are presented. The oscillator can be operated between 36.8 GHz and 38.6 GHz. The use of two independent varactor diodes enables the adjustment o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2e1bb885461047ef2a15c31bbe43163
https://doi.org/10.1109/euma.1995.336964
https://doi.org/10.1109/euma.1995.336964
Autor:
J. Schroth, U. Guttich, A. Colquhoun, J.-M. Dieudonne, B. Adelseck, J. Splettstober, A. Klaassen
Publikováno v:
1994 24th European Microwave Conference.
The feasability of monolithic millimetre-wave front-ends based on a GaAs MESFET technology has been demonstrated. Different specific MMIC circuit functions have been fabricated using a 0.25 ?m GaAs MESFET technology. Mixer, doubler and switch MMIC ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2706feb07c30a8ed1bea2327938a0b
https://doi.org/10.1109/euma.1994.337265
https://doi.org/10.1109/euma.1994.337265
Publikováno v:
21st European Microwave Conference, 1991.
Quarter micron dual-gate MESFETs and pseudomorphic HEMTs connected as a cascode circuit have been fabricated and investigated. The devices exhibit a high output impedance and a very low feedback capacitance resulting in high voltage gain factors gm/g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5322bbb0065645853fa6b779cd144cf0
https://doi.org/10.1109/euma.1991.336366
https://doi.org/10.1109/euma.1991.336366
Conference
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