Zobrazeno 1 - 10
of 63
pro vyhledávání: '"J. Sevenhans"'
Publikováno v:
Radioengineering, Vol 2, Iss 2 (1993)
This paper describes the design of a Nonius Flash Analog to Digital Convertor for video-applications. The conversion is split up in two stages: the MSB and the LSB conversion stage. In the LSB conversion stage, the reference-voltage for the comparato
Externí odkaz:
https://doaj.org/article/27e40196934f41d588b0d24e954c4ce7
Autor:
J. Sevenhans, Thierry Fernandez, S.A.M. Dupont, J.F.J. Wouters, C. Das, S. Van hoogenbemt, Jeff Biggs
Publikováno v:
IEEE Journal of Solid-State Circuits. 40:1541-1548
This paper presents an inductive load driver. The circuit is realized in a standard low-voltage CMOS process: as the coil freewheels when the driver is switched off, the circuit clamps the output voltage at 100 mV above the power supply. Hence, no hi
Autor:
Denis Flandre, E. Compagne, Claude Tabone, L. Picheta, P. Llinares, G. Fletcher, Gilles Dambrine, J-P Raskin, O. Faynot, Vincent Dessard, M. Vanmackelberg, A. Grouillet, J. Sevenhans, J.L. Pelloie, D. Vanhoenacker, E. Mackowiak, C. Raynaud, François Martin
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2002, 46, pp.379-386
Solid-State Electronics, 2002, 46 (3), pp.379-386. ⟨10.1016/S0038-1101(01)00120-4⟩
Solid-State Electronics, Elsevier, 2002, 46, pp.379-386
Solid-State Electronics, 2002, 46 (3), pp.379-386. ⟨10.1016/S0038-1101(01)00120-4⟩
The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 mum Fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 mum part
Autor:
Paul Marie Pierre Spruyt, S. Van Den Bergh, D. Van Bruyssel, B. Van Nimmen, J. Sevenhans, Peter Paul Frans Reusens
Publikováno v:
IEEE Communications Magazine. 39:145-151
This article offers a behind the scenes glimpse of a successful ADSL transceiver development, completed over the last decade while the ADSL standard evolved. It discusses the pitfalls experienced by designers and describes how a pragmatic and unconve
Publikováno v:
1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A solid-state X-ray sensitive diode array with on-chip serial readout circuitry will be reported. The sensor consists of 128 diodes on a pitch of 400μm. Die size is 50×4mm. Device operates at a 1MHz pixel rate and achieves a sensitivity of 2.3nA/mm
Publikováno v:
IEEE international solid-state circuits conference
The convergence of silicon and embedded software, accompanied by increasing design complexity, exposes a gap between system conception and silicon/software implementation. Design methodologies are presented that make the connection from high level sy
Publikováno v:
EDAC-ETC-EUROASIC
This paper describes the design and testing of a 1-bit A/D converter based on the sigma-delta modulation principle. Unlike the conventional realisations using the switched capacitor approach, the current switching technique uses the current level as
Publikováno v:
1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers.
For the development of a new generation line circuit a 4 channel speech processor was designed and fabricated in a 1.2 mu CMOS technology. The circuit includes digital signal processing for receive and transmit signals as well as the analog frontend
Autor:
R. Gillon, J.L. Pelloie, G. Fletcher, O. Faynot, D. Vanhoenaker, C. Raynaud, J. Sevenhans, E. Mackowiak, Simon Deleonibus, E. Compagne
Publikováno v:
Scopus-Elsevier
Fully-depleted (FD) SOI devices have interesting characteristics for low power applications because of their low subthreshold swing and their low source/drain capacitances compared to bulk devices. Furthermore, floating body effects are much reduced
Publikováno v:
IEEE Solid-State Circuits Newsletter. 12:78-79
This three-day workshop newly cosponsored by SSCS will feature 18 invited speakers on Sensors, Actuators and Power Drivers for the Automotive and Industrial Environment (Tuesday, 27 March), Very High Frequency Front Ends (Wednesday, 28 March), and In