Zobrazeno 1 - 10
of 19
pro vyhledávání: '"J. Schmälzlin"'
Autor:
J. Brenneisen, R. Ott, J. Schmälzlin, P. Siedle, H. Röpke, B. Erhardt, B. H. Wildenthal, Th. Kern, F. Glatz
Publikováno v:
Zeitschrift für Physik A Hadrons and Nuclei. 357:377-386
The properties of positive-parity states in 32S are compared to predictions of shell model calculations within the complete s-d basis space using the universal s-d shell Hamiltonian. The experimental T = O spectrum is reproduced to excitation energie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e517647b4e6ca1660faff9f71a25de
https://doi.org/10.1007/s002180050257
https://doi.org/10.1007/s002180050257
Autor:
B. H. Wildenthal, F. Glatz, P. Siedle, R. Ott, J. Schmälzlin, Th. Kern, J. Brenneisen, H. Röpke, B. Erhardt
Publikováno v:
Zeitschrift für Physik A Hadrons and Nuclei. 357:157-173
Assignments of I, π, T are made to 30 levels in 32S between 7.35 and 11.76 MeV excitation energy, making the spectroscopy of the T= 0 states rather complete up to 10 MeV and that of the T = 1 states up to 12 MeV. A reassessment of existing data in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a618d1dd6e4c37f751f1d4d98d838f1
https://doi.org/10.1007/s002180050231
https://doi.org/10.1007/s002180050231
Autor:
M. Lickert, B. Ehrhard, J. Brenneisen, J. Schmälzlin, H. Röpke, S. Fischer, D. Grathwohl, R. Ott, P. M. Endt, P. Siedle, B. H. Wildenthal
Publikováno v:
Zeitschrift für Physik A Hadrons and Nuclei. 354:301-310
Measurements of resonance strengths and ofγ-ray angular distributions or anisotropies have been performed on selected resonances of the25Mg(p, γ) reaction in the rangeEp=2–4 MeV,Ex=8.2−10.1 MeV with an emphasis on high-spin andT=1 analog resona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f02a6e19bb8ab335681d3161687a0bf
https://doi.org/10.1007/bf02769530
https://doi.org/10.1007/bf02769530
Autor:
J. Brenneisen, D. Grathwohl, B. Ehrhard, P. M. Endt, S. Fischer, M. Lickert, R. Ott, H. Röpke, J. Schmälzlin, P. Siedle, B. H. Wildenthal
Publikováno v:
Zeitschrift f�r Physik A Hadrons and Nuclei. 354:301-310
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d37d2fa50a5d64b5c4e3f71cf3ac65d
https://doi.org/10.1007/s002180050049
https://doi.org/10.1007/s002180050049
The structure of28Si above 10 MeV excitation energy III: Level scheme and shell model interpretation
Autor:
J. Brenneisen, D. Grathwohl, H. Röpke, P. Siedle, B. H. Wildenthal, J. Schmälzlin, M. Lickert, R. Ott
Publikováno v:
Zeitschrift f�r Physik A Hadrons and Nuclei. 352:403-415
28Si level scheme up to 14.5 MeV excitation energy is reevaluated using information from two preceding papers. It consists of approximately 250 levels which are almost completely characterized according to the quantum numbersI, π, T of the levels. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9410721ed824b9df411d58d195c4827c
https://doi.org/10.1007/bf01299758
https://doi.org/10.1007/bf01299758
Autor:
P. Siedle, J. Schmälzlin, B. H. Wildenthal, M. Lickert, J. Brenneisen, H. Röpke, D. Grathwohl, R. Ott
Publikováno v:
Zeitschrift f�r Physik A Hadrons and Nuclei. 352:279-291
New assignments of quantum numbers have been obtained for more than 50 levels in28Si between 8953 and 15915 keV excitation energy. They are based on the measurement of γ-ray angular distributions or anisotropies on 29 resonances of the27Al(p, γ) re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0096a50f096f22b3aa6e5df6ff8d25d6
https://doi.org/10.1007/bf01289501
https://doi.org/10.1007/bf01289501
Autor:
D. Grathwohl, J. Brenneisen, B. H. Wildenthal, H. Röpke, M. Lickert, R. Ott, J. Schmälzlin, P. Siedle
Publikováno v:
Zeitschrift f�r Physik A Hadrons and Nuclei. 352:149-159
The systematics ofγ-decay modes and radiative widths of highly excited states in28Si has been extended by takingγ-ray spectra on 60 resonances of the27Al(p,γ) reaction in the range 1097 keV≤Ep≤ 4492 keV (12643 keV≤Ex≤ 15915 keV) and on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea99faea591bca678bde48eb07cd42d
https://doi.org/10.1007/bf01298901
https://doi.org/10.1007/bf01298901
Publikováno v:
Journal of Applied Physics. 68:6179-6186
The excessive damage and high defect density generated during ion‐beam etching of crystalline Si is characterized by Rutherford backscattering, photoluminescence, and transmission electron microscopy. In samples etched at room temperature, a highly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::217923b50da4c0e8637bd9cb13495d27
https://doi.org/10.1063/1.346908
https://doi.org/10.1063/1.346908
Publikováno v:
Journal of Applied Physics. 68:2176-2180
The crystal‐field splittings recently observed in the Er‐related optical absorption spectra of ErAs films grown on GaAs by molecular‐beam epitaxy are further investigated with respect to their applicability in characterizing strain accommodatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3282be6fe83067825db17e803da862b5
https://doi.org/10.1063/1.346545
https://doi.org/10.1063/1.346545
The molecular-beam epitaxial overgrowth of GaAs on single ErAs layers of varying thickness is studied, as well as the growth of, and strain accommodation in, ErAs/GaAs multilayer films on GaAs substrates. Resonant Raman scattering and Rutherford back
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3b5375c82de7e158491269885d5a961
https://publica.fraunhofer.de/handle/publica/180326
https://publica.fraunhofer.de/handle/publica/180326
