Zobrazeno 1 - 10
of 54
pro vyhledávání: '"J. Scarpulla"'
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2502-2510
A high resolution measurement system was constructed to investigate transient capacitance changes in varactor diodes after exposure to Co/sup 60/ photons. These capacitance transients, while small, adversely affect the phase settling times of phase l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::261c196ab67d5a4d2126fbb2f9168377
https://doi.org/10.1109/23.340608
https://doi.org/10.1109/23.340608
Publikováno v:
IEEE Transactions on Nuclear Science. 39:1990-1997
It has been observed that radiation-induced threshold voltage shifts, interface trap densities, and channel mobility reductions are dependent on the drawn or coded geometrical sizes of transistors in one radiation-hardened VLSI CMOS technology. In an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1217a52e17c5d44830935eefee8c7f9f
https://doi.org/10.1109/23.211395
https://doi.org/10.1109/23.211395
Publikováno v:
IEEE Transactions on Nuclear Science. 38:1746-1753
Nitrided oxides and reoxidized nitrided oxides processed at various nitridation temperatures for various nitridation times have been irradiated. The total dose response of these nitrided oxides has been analyzed and compared to that of radiation-hard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f9cc20c21c8e3ce5131cc718fd28b38
https://doi.org/10.1109/tns.1991.574224
https://doi.org/10.1109/tns.1991.574224
Publikováno v:
IEEE Electron Device Letters. 17:322-324
In certain situations, very large scale integration (VLSI) metal interconnects are subjected to short duration high current pulses. This occurs in FPGA programming, and in radiation testing for latchup. The authors have determined the effects of such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2256e5c19da5b97e9cebb59a9eb84b73
https://doi.org/10.1109/55.506355
https://doi.org/10.1109/55.506355
Autor:
J. Scarpulla, Michael E. Barsky, Dwight C. Streit, M. Biedenbender, A.K. Oki, P.H. Liu, Richard Lai, D. Eng, D. Leung, Ronald W. Grundbacher, Y.C. Chou
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
The evolution of DC and microwave degradation induced by three-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs was investigated. Reliability investigations were performed on monolithic microwave integrated circuit (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae0d89d629e2c3872f8dcc416780741
https://doi.org/10.1109/relphy.2002.996643
https://doi.org/10.1109/relphy.2002.996643
Publikováno v:
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459).
Reliability testing was completed on 0.1 /spl mu/m gate length GaAs pseudomorphic HEMT MMICs. The circuit used for reliability testing is the ALH225C, a 2-stage Q band balanced amplifier. This MMIC was fabricated on both power and low noise substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09eb8d9efbc3be76c040af28badc4ff4
https://doi.org/10.1109/gaasrw.1999.874166
https://doi.org/10.1109/gaasrw.1999.874166
Autor:
J. Scarpulla, D.C. Eng
Publikováno v:
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459).
The effect of hydrogen incorporation is well known to degrade the performance of GaAs HEMT transistors. The main source of hydrogen is in the plated internal metal surfaces of a hermetic enclosure used to package GaAs MMICs. We have found a new circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcdcda45c19f939ed7fc175069cb2988
https://doi.org/10.1109/gaasrw.1999.874167
https://doi.org/10.1109/gaasrw.1999.874167
Publikováno v:
1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296).
The metal-insulator-metal capacitor (MIMCAP) is a key passive component utilized in GaAs-based MMIC technologies. The dielectric used in MIMCAPs is silicon nitride (Si/sub 3/N/sub 4/) because of its compatibility with the GaAs processing. This type o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd7169272e80a1e39154afb2f070c73
https://doi.org/10.1109/relphy.1999.761604
https://doi.org/10.1109/relphy.1999.761604
Publikováno v:
1999 IEEE Radio Frequency Integrated Circuits Symposium (Cat No.99CH37001).
High reliability performance of a Ka-band low-noise MMIC amplifier fabricated using a 0.15 /spl mu/m production AlGaAs-InGaAs-GaAs HEMT process technology is reported. Operating at an accelerated DC bias condition of Vds=5.2 V and Ids=250 mA/mm, two-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e703e6d78b47641a3071fa261cda8be1
https://doi.org/10.1109/rfic.1999.805259
https://doi.org/10.1109/rfic.1999.805259
Publikováno v:
1992 Symposium on VLSI Technology Digest of Technical Papers.
It is pointed out that wafer-mapping of physical stresses by X-ray diffraction of a silicided CMOS process shows regions of both very high and low stress levels. The regions of high stress consistently have increased subthreshold slopes and are much
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ab1db8330ecc1989462b935be7f798
https://doi.org/10.1109/vlsit.1992.200668
https://doi.org/10.1109/vlsit.1992.200668