Zobrazeno 1 - 10
of 20
pro vyhledávání: '"J. S. Vermaak"'
Publikováno v:
Journal of Materials Science. 29:2017-2024
The nucleation and growth of undoped gallium arsenide (GaAs) epitaxial layers, grown by metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates were investigated by transmission electron microscopy (TEM). The initial stages of epitaxial grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d34dcdc5e4484c690ab5f420f0033ec
https://doi.org/10.1007/bf01154676
https://doi.org/10.1007/bf01154676
Publikováno v:
Journal of Materials Science: Materials in Electronics. 3:240-243
The nucleation and growth of Ge on Si(111) substrates were investigated by transmission electron microscopy (TEM). It was found that growth is initiated by the formation of three-dimensional islands. At a very early stage of growth a polycrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b9d88481f8543ca81ed41dfefd884c
https://doi.org/10.1007/bf00703034
https://doi.org/10.1007/bf00703034
Publikováno v:
Materials Letters. 13:65-79
The nucleation and growth of undoped gallium arsenide (GaAs) epitaxial layers, grown by metallo-organic vapour-phase epitaxy (MOVPE) on Si (001) substrates, were investigated by transmission electron microscopy (TEM). The influence of growth time and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84a2bd51732cf08886987d15a46b9898
https://doi.org/10.1016/0167-577x(92)90111-v
https://doi.org/10.1016/0167-577x(92)90111-v
Publikováno v:
Journal of Applied Physics. 49:5435-5440
The deformation of Si‐doped GaAs single crystals with a carrier concentration of 1018 cm−3 was investigated by determining the stress/strain relationships for α and β bending at 500 °C. Marked differences were found between the α and β defor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ccd2eaa3361fe53788357bbea3d6a9
https://doi.org/10.1063/1.324501
https://doi.org/10.1063/1.324501
Publikováno v:
Journal of Applied Physics. 48:3008-3013
It is shown that 60° and 90° α and β dislocations give rise to piezoelectrically induced charge distributions and electric fields in the surrounding crystal. The general features of the charge distributions are discussed with special references t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8bf14a36ff5261c9b335fcff7fffdba
https://doi.org/10.1063/1.324118
https://doi.org/10.1063/1.324118
Publikováno v:
Journal of Applied Physics. 49:1149-1155
General expressions for the changes in resistivity and conductivity around 60°, edge, and screw dislocations as a consequence of the piezoresistance effect were calculated for III‐V compounds. These expressions are discussed with reference to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18f1ef38dceb6e6d127490a53f5b4f3c
https://doi.org/10.1063/1.325054
https://doi.org/10.1063/1.325054
Publikováno v:
Journal of Applied Physics. 49:3272-3275
The nonuniform rate of creation of Joule heat due to variations in the electrical conductivity around dislocations in III‐V compounds gives rise to variations in the temperature around these dislocations. The general equations and boundary conditio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9aa60416889f893942754c7810f60af
https://doi.org/10.1063/1.325276
https://doi.org/10.1063/1.325276
Publikováno v:
Journal of Applied Physics. 59:158-163
The electron and hole traps occurring in melt‐grown undoped n‐type GaAs have been studied using deep level transient spectroscopy. Several electron traps with energies ranging from 0.81 to 0.14 eV below the conduction band, as well as three hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e129231c30a3447387344fb1bc063b7
https://doi.org/10.1063/1.336854
https://doi.org/10.1063/1.336854
Publikováno v:
Journal of Applied Physics. 49:1173-1176
The anisotropy in the carrier mobility due to the presence of dislocations in III‐V compounds is determined using a method based on the equivalence of scattering energy loss and Joule heat created in the crystal. It is found that the mobility is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::032e1fe08e574675366a4045bad75d67
https://doi.org/10.1063/1.325058
https://doi.org/10.1063/1.325058
Autor:
H. Booyens, J. S. Vermaak
Publikováno v:
Journal of Applied Physics. 50:4302-4306
By considering the coupling effect between the direct and converse piezoelectric effects, general expressions are derived for the polarization charge distribution and electric field due to a general dislocation with its line along a 〈110〉 directi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b0e2cfd06aab4b1513037b3d8ebf49
https://doi.org/10.1063/1.326466
https://doi.org/10.1063/1.326466