Zobrazeno 1 - 10
of 50
pro vyhledávání: '"J. S. Tsang"'
Autor:
Thomas, Hagan, Bram, Gerritsen, Lewis E, Tomalin, Slim, Fourati, Matthew P, Mulè, Daniel G, Chawla, Dmitri, Rychkov, Evan, Henrich, Helen E R, Miller, Joann, Diray-Arce, Patrick, Dunn, Audrey, Lee, Ofer, Levy, Raphael, Gottardo, Minne M, Sarwal, John S, Tsang, Mayte, Suárez-Fariñas, Rafick-Pierre, Sékaly, Steven H, Kleinstein, J S, Tsang
Publikováno v:
Nature immunology. 23(12)
Systems vaccinology has defined molecular signatures and mechanisms of immunity to vaccination. However, comparative analysis of immunity to different vaccines is lacking. We integrated transcriptional data of over 3,000 samples, from 820 adults acro
Publikováno v:
Journal of Applied Physics. 83:366-371
We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance–voltage (C–V), current–voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0
Publikováno v:
Diseases of the esophagus : official journal of the International Society for Diseases of the Esophagus. 27(2)
Esophagectomy remains the mainstay of treatment for esophageal cancer. The stomach is the commonest organ used to restore intestinal continuity after esophagectomy. Metachronous gastric cancer in the gastric conduit after esophagectomy is rare; the e
Publikováno v:
Journal of Applied Physics. 80:2891-2895
Pd/AlxGa1−xAs Schottky contacts and their thermal reactions are studied by capacitance–voltage measurements, current–voltage measurements, and x‐ray diffraction. The thickness of AlxGa1−xAs consumed by the Pd/AlxGa1−xAs reaction during an
Publikováno v:
Journal of Applied Physics. 77:4302-4306
Compositional disordering of GaAs/AlGaAs quantum wells due to the presence of low‐temperature grown GaAs (by molecular beam epitaxy) was studied. Ga vacancy enhanced interdiffusion was found to be the mechanism underlying the observed intermixing.
Publikováno v:
Journal of Applied Physics. 76:274-277
The influence of oxygen on the performance of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) has been studied. Photoluminescence and secondary ion mass spectroscopy were used to examine the relationship between the quality of AlGaAs and the
Publikováno v:
Journal of Applied Physics. 74:4882-4885
The effect of indium doping in the graded‐index regions of the InGaAs/GaAs/AlGaAs graded‐index separated confinement heterostructure quantum well laser has been studied. It was found that the threshold current density can be greatly reduced by a
Publikováno v:
Journal of Applied Physics. 74:1398-1402
AlGaAs/GaAs heterostructure emitter bipolar transistors were grown with emitter thicknesses varied from 300 to 900 A and the emitter thickness effects on the current gain and offset voltage were studied. It was found that both the current gain and of
Publikováno v:
Journal of Applied Physics. 73:8027-8034
The influences of cladding layer thicknesses on the performance of strained‐layer InGaAs/GaAs graded‐index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed u
Publikováno v:
Hawaii medical journal. 69(6 Suppl 3)
Group medical visits benefit both patients and providers. In this study, a family medicine resident physician initiated group medical visits for diabetes mellitus at a family medicine residency clinic with the cooperative health care clinic format. P