Zobrazeno 1 - 10
of 23
pro vyhledávání: '"J. S. Speck"'
Publikováno v:
APL Materials, Vol 4, Iss 1, Pp 016105-016105-8 (2016)
We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there
Externí odkaz:
https://doaj.org/article/2f40540d024e43dca38e69765c467f5f
Publikováno v:
APL Materials, Vol 2, Iss 4, Pp 046104-046104-7 (2014)
n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the forma
Externí odkaz:
https://doaj.org/article/33cebe12c3d1414daae16b1d45b0b7df
Autor:
R. M. Cadena, D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, B. R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 70:363-369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::340eef344cbfa124dcf134df85554130
https://doi.org/10.1109/tns.2023.3237979
https://doi.org/10.1109/tns.2023.3237979
Publikováno v:
Journal of Applied Physics. 133:143101
Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545042db491f7de057f9fb86b614f448
https://doi.org/10.1063/5.0142035
https://doi.org/10.1063/5.0142035
Autor:
M Ikram Md Taib, M A Ahmad, E A Alias, A I Alhassan, I A Ajia, M M Muhammed, I S Roqan, S P DenBaars, J S Speck, S Nakamura, N Zainal
Publikováno v:
Semiconductor Science and Technology. 38:035025
In this work, indium (In) was introduced as a surfactant during growth of high temperature GaN quantum barriers (QBs) and GaN interlayer of InGaN/GaN green LEDs. A reference LED grown without In-surfactant was also included for comparison. Results su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38872779ceec793541487ec86784185c
https://doi.org/10.1088/1361-6641/acb2eb
https://doi.org/10.1088/1361-6641/acb2eb
Publikováno v:
Applied Physics Letters. 121:181102
Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d11376e17a3783e7880080224849fe56
https://doi.org/10.1063/5.0117318
https://doi.org/10.1063/5.0117318
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1300-1307
Plasma-assisted molecular beam epitaxy has been shown to be a viable and practical method for producing high quality tin oxide, SnO2. Phase-pure epitaxial single crystalline SnO2 (101) thin films of 1μm in thickness were reproducibly grown on r-plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d4ef9b6cac77732595c66939787d200
https://doi.org/10.1116/1.2966423
https://doi.org/10.1116/1.2966423
Autor:
B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, Shuji Nakamura
Publikováno v:
Applied Physics Letters. 83:644-646
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2e072b631991da89b4625afd98e9939
https://doi.org/10.1063/1.1593817
https://doi.org/10.1063/1.1593817
Autor:
J. S. Speck
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99f9dcf095e81f5a380bf221650c7938
https://doi.org/10.7567/ssdm.2011.m-1-1
https://doi.org/10.7567/ssdm.2011.m-1-1
Publikováno v:
Applied Physics Letters. 78:105-107
A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90e8c851c6b048e994de069217182be4
https://doi.org/10.1063/1.1336554
https://doi.org/10.1063/1.1336554