Zobrazeno 1 - 10
of 15
pro vyhledávání: '"J. S. Rojas-Ramírez"'
Autor:
I. Martínez-Velis, M. Ramírez-López, C. Vázquez-López, Máximo López-López, Y. Kudriatsev, J. S. Rojas-Ramírez, S. Gallardo-Hernández, Victor-Tapio Rangel-Kuoppa, Sergio Jiménez-Sandoval, R. Contreras-Guerrero
Publikováno v:
Journal of Crystal Growth. 323:344-347
GaMnAs layers were grown by MBE on GaAs (0 0 1) substrates. The structural properties of the epilayers were studied by atomic force microscopy, secondary ion mass spectroscopy, high-resolution X-ray diffraction, and Raman spectroscopy. Photoreflectan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df7d60a4849d0a3f16e2a720901c72a4
https://doi.org/10.1016/j.jcrysgro.2010.12.041
https://doi.org/10.1016/j.jcrysgro.2010.12.041
Autor:
R. Contreras-Guerrero, J. S. Rojas-Ramírez, Máximo López-López, J. Hernández-Rosas, C. Mejía-García, E. Cruz-Hernández, R. Méndez-Camacho, V.H. Méndez-García
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:2571-2574
We present the synthesis and characterization of a system of self-assembling GaAs quantum wires (QWRs) embedded in Alx Ga1−x As barriers grown by molecular beam epitaxy on GaAs(6 3 1)-oriented substrates. We studied the optical transitions in the Q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::094ef9d68119303b5813df766c259ee0
https://doi.org/10.1016/j.physe.2010.03.019
https://doi.org/10.1016/j.physe.2010.03.019
Autor:
M. Ramírez-López, Máximo López-López, Víctor Hugo Méndez-García, J. S. Rojas-Ramírez, Luis Zamora-Peredo, A.Yu. Gorbatchev, G. Garcia-Linan, I. Martínez-Velis, J. Hernández-Rosas, R. Contreras-Guerrero
Publikováno v:
physica status solidi (a). 206:836-841
The molecular beam epitaxial (MBE) growth of InAs nanostructures on GaAs(631)-oriented substrates is studied by photoluminescence (PL) and photoreflectance spectroscopy (PR). First, a corrugated surface conformed by regularly spaced grooves aligned a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce86d59dff0ca41fbfc49629335077ef
https://doi.org/10.1002/pssa.200881412
https://doi.org/10.1002/pssa.200881412
Autor:
A. Guillén-Cervantes, V.H. Méndez-García, V.M. Sánchez-Reséndiz, Luis Zamora-Peredo, E. Cruz-Hernández, Y. Kudriatsev, J. S. Rojas-Ramírez, Máximo López-López, A. Pulzara-Mora, R. Contreras-Guerrero, Z. Rivera-Alvarez, S. Gallardo-Hernández
Publikováno v:
Journal of Crystal Growth. 311:1666-1670
AlGaAs/GaAs quantum wells (QWs) structures were grown by molecular beam epitaxy (MBE) on semi-insulating- and Si-doped GaAs (1 0 0) substrates subjected to different surface treatments. The substrate treatments employed were: (a) H 2 SO 4 -based chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e59178fa40d2ff2d3b47192109737e6
https://doi.org/10.1016/j.jcrysgro.2008.11.010
https://doi.org/10.1016/j.jcrysgro.2008.11.010
Autor:
J. S. Rojas-Ramírez, Esteban Cruz-Hernández, I. Martínez-Velis, A. Pulzara-Mora, M. Ramírez-López, Máximo López-López
Publikováno v:
Respuestas, Vol 12, Iss 2, Pp 47-51 (2007)
Abstract In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb2ca62007be509443da95f6b97c0203
http://revistas.ufps.edu.co/ojs/index.php/respuestas/article/view/570/575
http://revistas.ufps.edu.co/ojs/index.php/respuestas/article/view/570/575
Autor:
Jorge A. Huerta-Ruelas, A. Pulzara-Mora, J. S. Rojas-Ramírez, Máximo López López, Julio Mendoza Alvarez, Victor Garcia
Publikováno v:
State-of-the-Art of Quantum Dot System Fabrications
Alvaro Pulzara-Mora1, Juan Salvador Rojas-Ramirez2, Victor Hugo Mendez Garcia3, Jorge A. Huerta-Ruelas4, Julio Mendoza Alvarez2 and Maximo Lopez Lopez2 1Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia Sede Manizales
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07a79ed0d9c98ef3b5fa32592f2a7994
http://www.intechopen.com/articles/show/title/self-assembled-inas-n-quantum-dots-grown-by-molecular-beam-epitaxy-on-gaas-100
http://www.intechopen.com/articles/show/title/self-assembled-inas-n-quantum-dots-grown-by-molecular-beam-epitaxy-on-gaas-100
Autor:
M. Pérez-Caro, M. Ramírez-López, J. S. Rojas-Ramírez, I. Martínez-Velis, Y. Casallas-Moreno, S. Gallardo-Hernández, B. J. Babu, S. Velumani, M. López-López, Agustín Conde-Gallardo, Eloy Ayón-Beato, Juan José Godina-Nava, Martín Hernández-Contreras, Liliana Velasco-Sevilla
Publikováno v:
AIP Conference Proceedings.
We report on the growth and characterization of self-assembled InGaN columnar nanostructures grown by gas source molecular beam epitaxy (GSMBE) on Si(111) substrates. At a zero concentration of Ga, InN nanocolumns (NCs) were successfully grown. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0e2bec67236195ccf05becc7cbf2aac
https://doi.org/10.1063/1.3678628
https://doi.org/10.1063/1.3678628
Publikováno v:
2008 International Nano-Optoelectronics Workshop.
The influence of the substrate orientation on the optical properties of InGaAs/GaAs quantum wells (QWpsilas) is studied in detail. Experimental data for the transition energies as obtained by photoluminescence (PL) and selective photoluminescence exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa5a0cd8468f4f927580aa3a3f494368
https://doi.org/10.1109/inow.2008.4634558
https://doi.org/10.1109/inow.2008.4634558
Autor:
J. S. Rojas-Ramírez, R. Goldhahn, P. Moser, J. Huerta-Ruelas, J. Hernández-Rosas, M. López-López, Luis Manuel Montaño Zetina, Gabino Torres Vega, Miguel Garcia Rocha, Luis F. Rojas Ochoa, Ricardo Lopez Fernandez
Publikováno v:
AIP Conference Proceedings.
We have studied the photoluminescence (PL) properties of strained In0.2Ga0.8As/GaAs quantum well (QW) structures grown by molecular beam epitaxy on (311)‐oriented substrates. Special attention has been paid to the PL linewidth measurements in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e40721cfee97224451038aabf6657515
https://doi.org/10.1063/1.3040258
https://doi.org/10.1063/1.3040258
Autor:
J. Hernández-Rosas, J.G. Mendoza-Alvarez, E. Cruz-Hernández, S. Gallardo-Hernández, J. S. Rojas-Ramírez, Máximo López-López
Publikováno v:
Microelectronics Journal. 39:1284-1285
InAs layers with thickness of ~1 monolayer (@d-layers) were grown by MBE embedded in GaAs barriers in the direction [100]. Photoluminescence (PL) spectroscopy was employed to study the electronic transitions in the @d-layers. By secondary-ion mass sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb8708afaab34e96050b1dff957d158
https://doi.org/10.1016/j.mejo.2008.01.062
https://doi.org/10.1016/j.mejo.2008.01.062