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pro vyhledávání: '"J. S. Martin"'
Akademický článek
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Supplementary information
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https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25aef0a5500343c83b752eec716d036d
Facial width-to-height ratio (fWHR) is associated with social dominance in human and non-human primates, which may reflect the effects of testosterone on facial morphology and behaviour. Given that testosterone facilitates status-seeking motivation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06e52f10c99feb2c1efc674e2d57c1b0
Akademický článek
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Autor:
Stephanie Pfirman, Paula J. S. Martin
“Facilitating Interdisciplinary Scholars,” by Stephanie Pfirman and Paula J. S. Martin, explores approaches to interdisciplinary scholarship with comparison to disciplinary traditions in higher education. The authors investigate the particular ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f62ae4688f253ed171b4ddcd466aac
https://doi.org/10.1093/oxfordhb/9780198733522.013.47
https://doi.org/10.1093/oxfordhb/9780198733522.013.47
Autor:
Michael I. Eides, Timothy J. S. Martin
Publikováno v:
Canadian Journal of Physics. 89:117-122
We discuss the leading relativistic (nonrecoil and recoil) corrections to bound state g-factors of particles with arbitrary spin. These corrections are universal for any spin and depend only on the free particle gyromagnetic ratios. We explain the ph
Autor:
Yaw S. Obeng, Gregory B. Shinn, G. R. Fox, Theodore S. Moise, J. S. Martin, A. McKerrow, J. Gertas, S. R. Summerfelt, K. R. Udayakumar, J. Eliason, J. Rodriguez, R. Bailey, A. Haider, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 46:2180-2183
We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semi
Autor:
S. R. Summerfelt, Theodore S. Moise, K. R. Udayakumar, Sanjeev Aggarwal, Hugh P. McAdams, B. Rathsack, Francis G. Celii, J. Rodriguez, Lindsey H. Hall, L. Matz, J. S. Martin, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 45:3202-3206
High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bi
Publikováno v:
The Journal of Physical Chemistry. 100:1689-1697
Recently reported molecular ion/surface scattering experiments suggest that translational and vibrational energies each have a distinct influence on molecular dissociation for the NO+/GaAs(110) system [J. Chem. Phys. 1994, 100, 6791]. To interrogate
Publikováno v:
Surface Science. 330:323-336
The processes of electron transfer and dissociative scattering are explored for collisions of hyperthermal NO + on GaAs(110). The experiments reveal a marked angular dependence to O − emergence. A strong correlation between the O − scattering ang