Zobrazeno 1 - 10
of 37
pro vyhledávání: '"J. S. Cheong"'
Impact Ionization Coefficients in (Al x Ga1-x )0.52In0.48P and Al x Ga1-x As Lattice-Matched to GaAs
Autor:
Liang Qiao, Harry I. J. Lewis, J. S. Cheong, John P. R. David, James E. Green, B.K. Ng, Aina N. A. P. Baharuddin, Andrey B. Krysa
Publikováno v:
IEEE Transactions on Electron Devices. 68:4045-4050
The impact ionization characteristics of (Al x Ga1- x )0.52In0.48P have been studied comprehensively across the full composition range. Electron and hole impact ionization coefficients ( $\alpha $ and $\beta $ , respectively) have been extracted from
Autor:
Liang Qiao, Mona M. Hella, Aina N. A. P. Baharuddin, J. S. Cheong, Sagar Ray, Majeed M. Hayat, John P. R. David, Md. Mottaleb Hossain
Publikováno v:
Journal of Lightwave Technology. 35:2315-2324
Mean-gain and excess-noise measurements are presented for a 350 × 350 μm2 P+/N-well/P-sub and a 270 × 270 μm2 N-well/P-sub avalanche photodetectors fabricated using 0.13-μm CMOS technology. The active area of the P+/N-well/P-sub device was divid
Autor:
Jo Shien Ng, Liang Qiao, J. S. L. Ong, J. S. Cheong, John P. R. David, James E. Green, Andrey B. Krysa
Publikováno v:
IEEE Photonics Technology Letters. 28:481-484
Multiplication and avalanche excess noise measurements have been undertaken on a series of AlInP homo-junction p-i-n and n-i-p diodes with $i$ region widths ranging from 0.04 to 0.89 $\mu \text{m}$ , using 442 and 460 nm wavelength light. Low dark cu
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 20:142-146
We demonstrate an ${\rm Al}_{0.52}{\rm In}_{0.48}{\rm P}$ homo-junction Separate Absorption Multiplication Avalanche Photodiode as a detector with narrow spectral response in the blue-green part of the optical spectrum. Due to its wide band-gap, this
Autor:
F. Harun, N. P. Hylton, John P. R. David, Tomos Thomas, Alexander Mellor, J. S. Cheong, Robert D. Richards, Nicholas J. Ekins-Daukes, Thomas E. Wilson
Publikováno v:
Photovoltaic Specialists Conference (PVSC)
A series of GaAsBi/GaAs multiple quantum well p-i-n diodes are characterized using IV, photocurrent and illuminated IV measurements. The results are compared to an InGaAs/GaAsP multiple quantum well control device of a design that has demonstrated ex
Autor:
David J. Wallis, Colin J. Humphreys, J. S. Cheong, J.W. Roberts, Ivor Guiney, H. Qian, Paul R. Chalker, K. B. Lee, Z H Zaidi, Peter A. Houston, Sheng Jiang, Penglei Li
Publikováno v:
JOURNAL OF APPLIED PHYSICS
In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices
Publikováno v:
SPIE Proceedings.
We demonstrate an AlInP detector grown on lattice-matched GaAs substrate for underwater communication applications. This detector has a narrow inherent spectral response of 22 nm with central wavelength at ~ 480 nm and is capable of having avalanche
Autor:
Aina N. A. P. Baharuddin, Jo Shien Ng, Liang Qiao, John P. David, J. S. Cheong, Andrey B. Krysa
Publikováno v:
Asia Communications and Photonics Conference 2015.
We describe an AlInP avalanche photodiode with a narrow spectral response at ~480nm, the peak transmission wavelength in deep water. The device has a peak responsivity of 30A/W at a gain of >200.
Publikováno v:
2014 IEEE Photonics Conference.
Publikováno v:
SPIE Proceedings.
Al0.52In0.48P is the largest bandgap material in III-V non-nitride semiconductors that is lattice matched to a readily available substrate (GaAs). Having a bandgap narrower than that of GaN enables it to detect wavelengths around 480 nm. Such wavelen