Zobrazeno 1 - 10
of 17
pro vyhledávání: '"J. S. BATCHELDER"'
Autor:
M. A. Taubenblatt, J. S. Batchelder
Publikováno v:
Applied optics. 31(17)
Automated-process tool clusters are becoming increasingly prevalent in advanced semiconductor manufacturing plants, necessitating integrated inspection of patterned semiconductor wafers for defects and particulates. Integrated inspection tools must b
Publikováno v:
Scopus-Elsevier
Techniques and calculations are presented that give explicit expressions for the over-all performance of a luminescent solar concentrator (LSC) in terms of the intrinsic spectral response and quantum efficiency of its constituents. We examine the sin
Autor:
M. A. Taubenblatt, J. S. Batchelder
Publikováno v:
Optical Society of America Annual Meeting.
Detection and identification of submicrometer contaminant particles in processing liquids is of critical importance in semiconductor manufacturing. Typical particle detection instruments sense scattered intensity and offer no means to determine parti
Autor:
M. A. Taubenblatt, J. S. Batchelder
Publikováno v:
Particles in Gases and Liquids 2 ISBN: 9781489935465
Different optical designs for particle detection in process fluids have generically different capabilities for scaling their performance to meet future semiconductor manufacturing requirements. We examine the ability of darkfield scattering intensity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68dea615a06437ab3197b331806e7f3e
https://doi.org/10.1007/978-1-4899-3544-1_28
https://doi.org/10.1007/978-1-4899-3544-1_28
Autor:
J. S. Batchelder, M. A. Taubenblatt
Publikováno v:
Optical Society of America Annual Meeting.
The continual reduction of printable feature sizes in micro-electronics fabrication will require UV optics and possibly x-ray or ebeam lithography in the coming decade. Since circuit patterns are typically adversely affected by particles one tenth of
Autor:
J. S. Batchelder, M. A. Taubenblatt
Publikováno v:
Applied Optics. 30:4972
We have previously shown that interferometry may be used to detect the phase shift of a focused beam caused by a small particle [Appl. Phys. Lett. 55, 215 (1989)]. This is a useful method for detecting small particles in liquids and with the ability
Publikováno v:
Journal of Applied Physics. 66:2542-2553
We have modeled the generation, diffusion, and recombination of photoexcited electrons and holes for the case of Czochralski Si wafers having a defect‐free‐zone (DFZ) device layer of thickness d above a highly precipitated wafer core and having a
Publikováno v:
Applied Physics Letters. 48:68-70
We demonstrate for the first time that the phase shift associated with amplitude modulated, near band‐edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.
Autor:
J. S. Batchelder
Publikováno v:
Review of Scientific Instruments. 54:300-302
Autor:
J. S. Batchelder, M. A. Taubenblatt
Publikováno v:
Applied Physics Letters. 55:215-217
The detection of subtenth micron paticles in processing fluids is a critical and growing need in the semiconductor industry. In this letter, we show that a small dielectric particle in a focused monochromatic light beam produces a scattered wave (Ray