Zobrazeno 1 - 10
of 10
pro vyhledávání: '"J. S. Arias"'
Autor:
J A Guerrero de León, A Pérez-Centeno, G Gómez-Rosas, E Camps, J S Arias-Cerón, M A Santana-Aranda, J G Quiñones-Galvan
Publikováno v:
Materials Research Express, Vol 7, Iss 1, p 016423 (2020)
In this work, structural, optical and electrical properties of ZnO thin films grown by laser ablation of a Zn metallic target on oxygen atmosphere using the 532 nm emission of the second harmonic of a Nd:YAG laser, are studied. Different mean kinetic
Externí odkaz:
https://doaj.org/article/1a4f7f7335f54b1493dafacc0615b776
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:7455-7460
This work discusses the frequency shift of Raman mode A1(LO) for InGaN epitaxial layers grown on polar (0002) and non-polar (11–20) planes concerning strain state, indium composition, and the probe excitation energy. Furthermore, it proposes MOCVD
Autor:
L.F. Guell Camacho, C. Matiz, M. P. Caicedo, B. Pinzon, A. Baldión Elorza, D. C. Hennesey, D. P. Cañon, S. M. Ortega, D. M. Palacios, J. S. Arias
Publikováno v:
Revista Colombiana de Neumología. 31
Caracterización de una población de pacientes con diagnóstico de enfermedad pulmonar intersticial
Autor:
D. C. Hennesey, M. P. Caicedo, A. Morales, C. Matiz, D. P. Cañon, A.M. Sarmiento, A.M. Baldión-Elorza, L. Garcia-Herreros, S. M. Ortega, D. M. Palacios, B. Pinzon, J. S. Arias, L.F. Guell Camacho
Publikováno v:
D36. INTERNATIONAL PERSPECTIVES ON PULMONARY AND CRITICAL CARE MEDICINE.
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:15570-15578
The semiconductor CdSe quantum dots (QDs) with emission spectra of different wavelengths were synthetized by using a modified method of simultaneous injection at heating. The obtained QDs were encapsulated into liposomes prepared by a method of lipid
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
J. A. Balderas-López, J. I. Contreras-Rascón, Joel Díaz-Reyes, Roberto Saúl Castillo-Ojeda, J. S. Arias-Ceron, J. E. Flores-Mena
Publikováno v:
Brazilian Journal of Physics. 44:726-732
In this work, the growth and characterization of cadmium selenide sulphur (CdSe1 − ySy) deposited by chemical bath deposition (CBD) technique at the reservoir temperature of 20 ± 2 °C are presented, varying the thiourea volume added to the growth
Autor:
J. I. Contreras-Rascón, J. Díaz-Reyes, R. S. Castillo-Ojeda, J. A. Balderas-López, J. S. Arias-Ceron, J. E. Flores-Mena
Publikováno v:
Instituto Politécnico Nacional
IPN
Redalyc-IPN
Benemérita Universidad Autónoma de Puebla
BUAP
Redalyc-BUAP
Brazilian Journal of Physics (Brasil) Num.6 Vol.44
IPN
Redalyc-IPN
Benemérita Universidad Autónoma de Puebla
BUAP
Redalyc-BUAP
Brazilian Journal of Physics (Brasil) Num.6 Vol.44
"In this work, the growth and characterization of cadmiumselenide sulphur (CdSe1−ySy) deposited by chemical bath deposition (CBD) technique at the reservoir temperature of 20±2 °C are presented, varying the thiourea volume added to the growth sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::24749dbc70c9ff8a348336ebff67226d
http://www.redalyc.org/articulo.oa?id=46432477017
http://www.redalyc.org/articulo.oa?id=46432477017
Autor:
J A Serrano-Ruz, E Campos-González, J Santoyo-Salazar, J S Arias-Cerón, A Chávez-Chávez, G Gómez-Rosas, A Pérez-Centeno, I Ceja, F de Moure-Flores, M Meléndez-Lira, A Hernández-Hernández, M A Santana-Aranda, J G Quiñones-Galván
Publikováno v:
Materials Research Express; Jan2018, Vol. 5 Issue 1, p1-1, 1p
Autor:
K Rodríguez-Rosales, J G Quiñones-Galván, A Guillén-Cervantes, E Campos-González, J Santos-Cruz, S A Mayén-Hernández, J S Arias-Cerón, M de la L Olvera, O Zelaya-Angel, L A Hernández-Hernández, G Contreras-Puente, F de Moure-Flores
Publikováno v:
Materials Research Express; Jul2017, Vol. 4 Issue 7, p1-1, 1p