Zobrazeno 1 - 10
of 48
pro vyhledávání: '"J. S. Ahearn"'
Publikováno v:
Journal of Applied Physics. 75:4731-4736
A long‐wavelength λc=18 μm infrared hot‐electron transistor (IHET) with low dark current is demonstrated. In order to achieve long‐wavelength absorption, a low barrier height is required, which in turn results in a large dark current. Therefo
Autor:
J. S. Ahearn, M. Nathan
Publikováno v:
Journal of Materials Science Letters. 13:1215-1218
Autor:
M. Nathan, J. S. Ahearn
Publikováno v:
Journal of Applied Physics. 70:811-820
Solid‐state interfacial reactions between self‐supporting thin (50, 100, and 200 A) films of Ni and Co, and amorphous (a) films of SiC, Si and C were investigated in the 300–1000 °C temperature range. The metastable solubility of C (from SiC)
Publikováno v:
Applied Physics Letters. 65:442-444
The origin of current reduction in an infrared hot‐electron transistor is examined by studying the thermal activation energy of the emitter and the collector dark current as a function of emitter bias Ve. For the emitter, the activation energy Eae
Publikováno v:
Applied Physics Letters. 64:1268-1270
A voltage tunable three‐color quantum well infrared photodetector (QWIP) consisting of asymmetric GaAs/AlGaAs double quantum wells has been demonstrated. The detector uses electron intersubband transitions in a coupled asymmetric double quantum wel
Autor:
J. S. Ahearn, M. Nathan
Publikováno v:
Journal of Materials Science Letters. 12:1622-1624
The authors report on a transmission electron microscopy (TEM) study of Sb-adjusted quaternary Al{sub 0.5}Ga{sub 0.5}As{sub 1{minus}y}Sb{sub y} buffer-layers grown on GaAs substrates. A series of structures were grown by MBE at 470 C that utilize a m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4e84237415b7a40b28cb51c97581be
https://doi.org/10.2172/307978
https://doi.org/10.2172/307978
Publikováno v:
MRS Proceedings. 484
We report on a TEM study of Sb-adjusted quaternary Al0.5Ga0.5As1-y Sby buffer-layers grown on GaAs substrates. A series of structures were grown by MBE at 470°C that utilize a multilayer grading scheme in which the Sb content of Al0.5Ga0.5As1-ySby i
Publikováno v:
Microscopy research and technique. 25(4)
A new method of thin section preparation of III-V semiconductors and multilayers for transmission electron microscopy (TEM) is presented that exhibits considerable advantages over conventional methods such as ion beam milling and jet thinning. GaAs t
Autor:
M. Nathan, J. S. Ahearn
Publikováno v:
Controlled Interphases in Composite Materials ISBN: 9789401178181
The mechanical and corrosion properties of most metal matrix composites (MMCs) are critically affected by the interfacial reactions between the matrix and the fiber or reinforcement medium. These reactions can be beneficial (i.e., increase the streng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dae9245854ce264bb81ee58c7fb557c8
https://doi.org/10.1007/978-94-011-7816-7_8
https://doi.org/10.1007/978-94-011-7816-7_8